Pulsed gate sweep strategies for hysteresis reduction in carbon nanotube transistors for low concentration NO2 gas detection

Nanotechnology

Volumn 21, Issue 18, 2010, Pages

  Mattmann, M ^a   Roman, C ^a   Helbling, T ^a   Bechstein, D ^a   Durrer, L ^a   Pohle, R ^b   Fleischer, M ^b   Hierold, C ^a  

^a ETH ZURICH   (Switzerland)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; CONCENTRATION-DEPENDENT; GAS DETECTION; GATE SWEEP; GATE VOLTAGES; HIGHLY SENSITIVE; HYSTERESIS MODELS; HYSTERESIS REDUCTION; HYSTERETIC BEHAVIOUR; LOW CONCENTRATION NO; MEASUREMENT DATA; PULSE WAVEFORMS; PULSED OPERATION; SENSOR OUTPUT; TARGET ANALYTES; TIMING PARAMETERS;

CARBON NANOTUBES; CHEMICAL SENSORS; FIELD EFFECT TRANSISTORS; REDUCTION;

HYSTERESIS;

CARBON NANOTUBE; NITROGEN DIOXIDE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ENVIRONMENTAL MONITORING; GAS; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; THEORETICAL MODEL;

ELECTROCHEMISTRY; ENVIRONMENTAL MONITORING; GASES; MODELS, THEORETICAL; NANOTECHNOLOGY; NANOTUBES, CARBON; NITROGEN DIOXIDE; TRANSISTORS, ELECTRONIC;

EID: 77950923315     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/18/185501     Document Type: Article

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