Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

NPG Asia Materials

Volumn 6, Issue 12, 2014, Pages e145-

  Oh, Hongseok ^a   Hong, Young Joon ^b   Kim, Kun Su ^a   Yoon, Sangmoon ^a   Baek, Hyeonjun ^a   Kang, Seoung Hun ^c   Kwon, Young Kyun ^c   Kim, Miyoung ^a   Yi, Gyu Chul ^a  

^a Seoul National University   (South Korea)

^b Sejong University   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CALCULATIONS; CHARACTERIZATION; DANGLING BONDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; INSULATION; NANOSTRUCTURES; NUCLEATION; OPTOELECTRONIC DEVICES; SUBSTRATES; ZINC OXIDE;

ELECTRICAL CHARACTERIZATION; ELECTRICAL INSULATION PROPERTIES; HETEROEPITAXIAL RELATIONSHIPS; HEXAGONAL BORON NITRIDE (H-BN); SEMICONDUCTOR INTEGRATION; THEORETICAL CALCULATIONS; TWO DIMENSIONAL (2 D); VAN DER WAALS EPITAXY;

VAN DER WAALS FORCES;

EID: 84927928347     PISSN: 18844049     EISSN: 18844057     Source Type: Journal    
DOI: 10.1038/am.2014.108     Document Type: Article

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