Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: Towards monolithic integration of nano-devices

Nanotechnology

Volumn 24, Issue 22, 2013, Pages

  Kanungo, Pratyush Das ^a   Schmid, Heinz ^a   Björk, Mikael T ^b   Gignac, Lynne M ^c   Breslin, Chris ^c   Bruley, John ^c   Bessire, Cedric D ^a   Riel, Heike ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b Ideon Science Park   (Sweden)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE GROWTH; DIFFERENT MATERIALS; MONOLITHIC INTEGRATION; SELECTIVE AREA EPITAXY; SELECTIVE AREA GROWTH; SEMICONDUCTING NANOWIRES; SEQUENTIAL DEPOSITION; TEMPLATE GEOMETRIES;

CATALYSIS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MONOLITHIC INTEGRATED CIRCUITS; NANOWIRES; SEMICONDUCTING SILICON; SILICON;

NANOTUBES;

EID: 84877764468     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/22/225304     Document Type: Article

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