Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate

Applied Physics Letters

Volumn 106, Issue 14, 2015, Pages

  Kang, Moonshik ^a,b   Rathi, Servin ^a   Lee, Inyeal ^a   Lim, Dongsuk ^a   Wang, Jianwei ^a   Li, Lijun ^a   Khan, Muhammad Atif ^a   Kim, Gil Ho ^a  

^a Sungkyunkwan University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SELENIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS;

ELECTRICAL CHARACTERIZATION; N-TYPE SEMICONDUCTORS; ON/OFF CURRENT RATIO; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; SEMICONDUCTING MATERIALS; THERMALLY ACTIVATED; TRANSPORT MECHANISM; TWO DIMENSIONAL FIELD;

FIELD EFFECT TRANSISTORS;

EID: 84927636273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4917458     Document Type: Article

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