HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy

ACS Nano

Volumn 9, Issue 1, 2015, Pages 474-480

  Yue, Ruoyu ^a   Barton, Adam T ^a   Zhu, Hui ^a   Azcatl, Angelica ^a   Pena, Luis F ^a   Wang, Jian ^a   Peng, Xin ^a   Lu, Ning ^a   Cheng, Lanxia ^a   Addou, Rafik ^a   McDonnell, Stephen ^a   Colombo, Luigi ^b   Hsu, Julia W P ^a   Kim, Jiyoung ^a   Kim, Moon J ^a   Wallace, Robert M ^a   Hinkle, Christopher L ^a  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

hafnium diselenide; heterostructure; transition metal dichalcogenides; tunnel field effect transistors; van der Waals epitaxy

Indexed keywords

ALIGNMENT; D REGION; DISLOCATIONS (CRYSTALS); ENERGY GAP; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SELENIUM COMPOUNDS; THIN FILMS; TRANSITION METALS; VAN DER WAALS FORCES;

DISELENIDE; HETEROSTRUCTURE; TRANSITION METAL DICHALCOGENIDES; TUNNEL FIELD EFFECT TRANSISTOR; VAN DER WAALS EPITAXY;

INTERFACES (MATERIALS);

EID: 84921789354     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5056496     Document Type: Article

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