Electrical properties of HfSe2 single crystals grown by chemical vapour transport technique

Asian Journal of Chemistry

Volumn 20, Issue 5, 2008, Pages 3774-3778

  Radhakrishnan, K ^a   Mohanan Pilla, K ^a  

^a NSS Hindu College   (India)

Author keywords

Hall parameters; HfSe2; Resistivity; Single crystals

Indexed keywords

EID: 53949103356     PISSN: 09707077     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. K.K. Kam and B.A. Parkinson, J. Phys. Chem., 86, 463 (1982).
2. J.B. Legma, G. Vacquier and A. Casalot, J. Cryst. Growth, 130, 253 (1993).
3. D. Canfield, K.K. Kam, G. Kline and B.A. Parkinson, Solar Energy Mater., 4, 301 (1981).
4. J.A. Wilson and A.D. Yoffe, Adv. Phys., 18, 193 (1969).
5. C. Gaiser, T. Zandt, A. Krapf, R. Serverin, C. Janowitz and R. Manzke, Phys. Rev. B, 69, 075205 (2004).
6. H. Tributsch, Faraday Discuss. Chem. Soc., 70, 189 (1980).
7. I. Taguchi, J. Phys. C: Solid State Phys., 14, 3221 (1981).
8. B.L. Evans and R.A. Hazelwood, Brit. J. Appl. Phys. (J. Phys. D.), 2, 1507 (1969).