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Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 7, 1999, Pages 4715-4722

High-excitation photoluminescence in GaN: Hot-carrier effects and the mott transition

(4) Binet, F a Duboz, J Y a Off, J b Scholz, F b

a THALES (France)

b UNIVERSITY OF STUTTGART (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000444445 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.60.4715 Document Type: Article

Times cited : (116)

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