Ge doped GaN with controllable high carrier concentration for plasmonic applications

Applied Physics Letters

Volumn 103, Issue 24, 2013, Pages

  Kirste, Ronny ^a   Hoffmann, Marc P ^a   Sachet, Edward ^a   Bobea, Milena ^a   Bryan, Zachary ^a   Bryan, Isaac ^a   Nenstiel, Christian ^b   Hoffmann, Axel ^b   Maria, Jon Paul ^a   Collazo, Ramón ^a   Sitar, Zlatko ^a  

^a North Carolina State University   (United States)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP RENORMALIZATION; BURSTEIN-MOSS SHIFT; ELECTRON PLASMAS; INFRARED ELLIPSOMETRY; LOW-TEMPERATURE LUMINESCENCE; PLASMONIC DEVICES; SHARP TRANSITION; SURFACE PLASMA;

CARRIER CONCENTRATION; GERMANIUM; PLASMONS;

GALLIUM NITRIDE;

EID: 84890494731     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4848555     Document Type: Article

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