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Physical Review Letters

Volumn 107, Issue 23, 2011, Pages

Optical absorption in degenerately doped semiconductors: Mott transition or Mahan excitons?

(5) Schleife, André a,b,c Rödl, Claudia a,b Fuchs, Frank a,b Hannewald, Karsten a,b Bechstedt, Friedhelm a,b

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

b European Theoretical Spectroscopy Facility ETSF (Germany)

c LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO TECHNIQUES; ABSORPTION EDGES; CONDUCTION-BAND STATE; DEGENERATE ELECTRON GAS; ELECTRON-DOPING; EXCITONIC EFFECT; FREE CARRIERS; FUNDAMENTAL BAND GAP; MOTT TRANSITIONS; PAULI BLOCKING; QUASI PARTICLES; TRANSPARENT CONDUCTING OXIDE;

ELECTRON GAS; EXCITONS; LIGHT ABSORPTION; SEMICONDUCTOR DOPING; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 82455185098 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.107.236405 Document Type: Article

Times cited : (71)

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