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Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

Band gap narrowing and radiative efficiency of silicon doped GaN

(7) Schenk, H P D a,c Borenstain, S I a Berezin, A a Schon A a Cheifetz, E a Khatsevich, S b Rich, D H b

a El Mul Technologies Ltd (Israel)

b BEN GURION UNIVERSITY OF THE NEGEV (Israel)

c CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ENERGY GAP; GALLIUM NITRIDE;

BAND GAP NARROWING; RADIATIVE EFFICIENCY;

SILICON;

EID: 44649140442 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2919775 Document Type: Article

Times cited : (27)

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