-
1
-
-
0022080421
-
Structure and properties of TiN coatings
-
J.-E. Sundgren Structure and properties of TiN coatings Thin Solid Films 128 12 1985 21
-
(1985)
Thin Solid Films
, vol.128
, Issue.12
, pp. 21
-
-
Sundgren, J.-E.1
-
3
-
-
33646019270
-
Nanoscale TiN metal gate technology for CMOS integration
-
M.C. Lemme, J.K. Efavi, T. Mollenhauer, M. Schmidt, H.D.B. Gottlob, T. Wahlbrink, and H. Kurz Nanoscale TiN metal gate technology for CMOS integration Microelectron. Eng. 83 2006 1551
-
(2006)
Microelectron. Eng.
, vol.83
, pp. 1551
-
-
Lemme, M.C.1
Efavi, J.K.2
Mollenhauer, T.3
Schmidt, M.4
Gottlob, H.D.B.5
Wahlbrink, T.6
Kurz, H.7
-
5
-
-
0032148208
-
Adhesion and debonding of multi-layer thin film structures
-
R. Dauskardt, M. Lane, Q. Ma, and N. Krishna Adhesion and debonding of multi-layer thin film structures Eng. Fract. Mech. 61 1 1998 141
-
(1998)
Eng. Fract. Mech.
, vol.61
, Issue.1
, pp. 141
-
-
Dauskardt, R.1
Lane, M.2
Ma, Q.3
Krishna, N.4
-
7
-
-
0032099341
-
Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire
-
V. Talyansky, R. Vispute, R. Ramesh, R. Sharma, T. Venkatesan, Y. Li, L. Salamanca-Riba, M. Wood, R. Lareau, K. Jones, and A. Iliadis Fabrication and characterization of epitaxial AlN/TiN bilayers on sapphire Thin Solid Films 323 1-2 1998 37
-
(1998)
Thin Solid Films
, vol.323
, Issue.12
, pp. 37
-
-
Talyansky, V.1
Vispute, R.2
Ramesh, R.3
Sharma, R.4
Venkatesan, T.5
Li, Y.6
Salamanca-Riba, L.7
Wood, M.8
Lareau, R.9
Jones, K.10
Iliadis, A.11
-
8
-
-
0141563618
-
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
-
J. Westlinder, T. Schram, L. Pantisano, E. Cartier, A. Kerber, G.S. Lujan, J. Olsson, and G. Groeseneken On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices IEEE Electron Device Lett. 24 9 2003 550
-
(2003)
IEEE Electron Device Lett.
, vol.24
, Issue.9
, pp. 550
-
-
Westlinder, J.1
Schram, T.2
Pantisano, L.3
Cartier, E.4
Kerber, A.5
Lujan, G.S.6
Olsson, J.7
Groeseneken, G.8
-
9
-
-
0031169723
-
Optical TiN films by filtered arc evaporation
-
N. Mustapha, and R. Howson Optical TiN films by filtered arc evaporation Surf. Coat. Technol. 92 1997 29
-
(1997)
Surf. Coat. Technol.
, vol.92
, pp. 29
-
-
Mustapha, N.1
Howson, R.2
-
10
-
-
0035576859
-
Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition
-
K. Lal, A.K. Meikap, S.K. Chattopadhyay, S.K. Chatterjee, M. Ghosh, K. Baba, and R. Hatada Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition Phys. B Condens. Matter 307 14 2001 150
-
(2001)
Phys. B Condens. Matter
, vol.307
, Issue.14
, pp. 150
-
-
Lal, K.1
Meikap, A.K.2
Chattopadhyay, S.K.3
Chatterjee, S.K.4
Ghosh, M.5
Baba, K.6
Hatada, R.7
-
11
-
-
33845888530
-
Properties of titanium nitride films prepared by direct current magnetron sputtering"
-
Y.L. Jeyachandran, Sa.K. Narayandass, D. Mangalaraj, Sami Areva, and J.A. Mielczarski Properties of titanium nitride films prepared by direct current magnetron sputtering" Mater. Sci. Eng.: A 445-446 2007 223
-
(2007)
Mater. Sci. Eng.: A
, vol.445-446
, pp. 223
-
-
Jeyachandran, Y.L.1
Narayandass, Sa.K.2
Mangalaraj, D.3
Areva, S.4
Mielczarski, J.A.5
-
12
-
-
0033369318
-
Colour control of titanium nitride coatings produced by reactive magnetron sputtering at temperature less than 10 °c
-
116119
-
P. Roquiny, F. Bodart, and G. Terwagne Colour control of titanium nitride coatings produced by reactive magnetron sputtering at temperature less than 10 °C Surf. Coat. Technol. 116119 1999 278
-
(1999)
Surf. Coat. Technol.
, pp. 278
-
-
Roquiny, P.1
Bodart, F.2
Terwagne, G.3
-
13
-
-
0029378214
-
Effect of annealing of titanium nitride on the diffusion barrier property in Cu metallization
-
K.-C. Park, and K.-B. Kim Effect of annealing of titanium nitride on the diffusion barrier property in Cu metallization J. Electrochem. Soc. 142 9 1995 3109
-
(1995)
J. Electrochem. Soc.
, vol.142
, Issue.9
, pp. 3109
-
-
Park, K.-C.1
Kim, K.-B.2
-
14
-
-
33846967539
-
Investigation of the thermal stability of reactively sputter-deposited TiN gate electrodes
-
G. Sjoblom, J. Westlinder, and J. Olsson Investigation of the thermal stability of reactively sputter-deposited TiN gate electrodes IEEE Trans. Electron Devices 52 10 2005 2349
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, Issue.10
, pp. 2349
-
-
Sjoblom, G.1
Westlinder, J.2
Olsson, J.3
-
15
-
-
84888998386
-
Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure
-
J.-P. Ao, Y. Naoi, and Y. Ohno Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure Vacuum 87 2013 150
-
(2013)
Vacuum
, vol.87
, pp. 150
-
-
Ao, J.-P.1
Naoi, Y.2
Ohno, Y.3
-
16
-
-
0036680739
-
The influences of oxygen impurity contained in nitrogen gas on the annealing of titanium nitride
-
F.-H. Lu, and J.-L. Lo The influences of oxygen impurity contained in nitrogen gas on the annealing of titanium nitride J. Eur. Ceram. Soc. 22 8 2002 1367
-
(2002)
J. Eur. Ceram. Soc.
, vol.22
, Issue.8
, pp. 1367
-
-
Lu, F.-H.1
Lo, J.-L.2
-
17
-
-
73849083890
-
Device performance and reliability characteristics of tantalum-silicon-nitride electrode/hafnium oxide n-type metal-oxide-semiconductor field-effect transistor depending on composition
-
H. Park, M. Chang, M. Jo, R. Choi, B.H. Lee, and H. Hwang Device performance and reliability characteristics of tantalum-silicon-nitride electrode/hafnium oxide n-type metal-oxide-semiconductor field-effect transistor depending on composition Jpn. J. Appl. Phys. 48 2009 116506
-
(2009)
Jpn. J. Appl. Phys.
, vol.48
, pp. 116506
-
-
Park, H.1
Chang, M.2
Jo, M.3
Choi, R.4
Lee, B.H.5
Hwang, H.6
-
18
-
-
19944370775
-
Influence of nitrogen content on the structural, mechanical and electrical properties of TiN thin films
-
F. Vaz, J. Ferreira, E. Ribeiro, L. Rebouta, S. Lanceros-Méndez, J.A. Mendes, E. Alves, Ph. Goudeau, J.P. Rivière, F. Ribeiro, I. Moutinho, K. Pischow, and J. de Rijk Influence of nitrogen content on the structural, mechanical and electrical properties of TiN thin films Surf. Coat. Technol. 191 2005 317
-
(2005)
Surf. Coat. Technol.
, vol.191
, pp. 317
-
-
Vaz, F.1
Ferreira, J.2
Ribeiro, E.3
Rebouta, L.4
Lanceros-Méndez, S.5
Mendes, J.A.6
Alves, E.7
Goudeau, Ph.8
Rivière, J.P.9
Ribeiro, F.10
Moutinho, I.11
Pischow, K.12
De Rijk, J.13
-
19
-
-
0001245717
-
Raman scattering, superconductivity, and phonon density of states of stoichiometric and nonstoichiometric TiN
-
W. Spengler, R. Kaiser, A.N. Christensen, and G. Müller-Vogt Raman scattering, superconductivity, and phonon density of states of stoichiometric and nonstoichiometric TiN Phys. Rev. B 17 1978 1095
-
(1978)
Phys. Rev. B
, vol.17
, pp. 1095
-
-
Spengler, W.1
Kaiser, R.2
Christensen, A.N.3
Müller-Vogt, G.4
-
20
-
-
0016522792
-
Resonant raman scattering in a superconducting transition metal compound TiN
-
W. Spengler, R. Kaiser, and H. Bilz Resonant raman scattering in a superconducting transition metal compound TiN Solid State Commun. 17 1 1975 19
-
(1975)
Solid State Commun.
, vol.17
, Issue.1
, pp. 19
-
-
Spengler, W.1
Kaiser, R.2
Bilz, H.3
-
21
-
-
11244250899
-
Raman spectroscopy studies on the thermal stability of TiN, CrN, TiAlN coatings and nanolayered TiN/CrN, TiAlN/CrN multilayer coatings
-
H.C. Barshilia, and K. Rajam Raman spectroscopy studies on the thermal stability of TiN, CrN, TiAlN coatings and nanolayered TiN/CrN, TiAlN/CrN multilayer coatings J. Mater. Res. 19 11 2004 3196
-
(2004)
J. Mater. Res.
, vol.19
, Issue.11
, pp. 3196
-
-
Barshilia, H.C.1
Rajam, K.2
-
22
-
-
0030172430
-
Characteristics of titanium nitride films grown by pulsed laser deposition
-
R. Chowdhury, R.D. Vispute, K. Jagannadham, and J. Narayan Characteristics of titanium nitride films grown by pulsed laser deposition J. Mater. Res. 11 6 1996 1458
-
(1996)
J. Mater. Res.
, vol.11
, Issue.6
, pp. 1458
-
-
Chowdhury, R.1
Vispute, R.D.2
Jagannadham, K.3
Narayan, J.4
-
23
-
-
84956039269
-
The characterization of titanium nitride by X-ray photoelectron spectroscopy and rutherford backscattering
-
M.J. Vasile, A.B. Emerson, and F.A. Baiocchi The characterization of titanium nitride by X-ray photoelectron spectroscopy and rutherford backscattering J. Vac. Sci. Technol. A 8 1 1990 99
-
(1990)
J. Vac. Sci. Technol. A
, vol.8
, Issue.1
, pp. 99
-
-
Vasile, M.J.1
Emerson, A.B.2
Baiocchi, F.A.3
-
24
-
-
34547582116
-
Evaluation of thin film titanium nitride electrodes for electroanalytical applications
-
C. Nunes Kirchner, K.H. Hallmeier, R. Szargan, T. Raschke, C. Radehaus, and G. Wittstock Evaluation of thin film titanium nitride electrodes for electroanalytical applications Electroanalysis 19 10 2007 1023
-
(2007)
Electroanalysis
, vol.19
, Issue.10
, pp. 1023
-
-
Nunes Kirchner, C.1
Hallmeier, K.H.2
Szargan, R.3
Raschke, T.4
Radehaus, C.5
Wittstock, G.6
-
26
-
-
0006755760
-
Diffusion of Si in titanium nitride films. Efficiency of TiN barrier layers
-
K.G. Grigorov, G.I. Grigorov, M. Stoyanova, J.L. Vignes, J.P. Langeron, P. Denjean, and J. Perriere Diffusion of Si in titanium nitride films. Efficiency of TiN barrier layers Appl. Phys. A 55 1992 502
-
(1992)
Appl. Phys. A
, vol.55
, pp. 502
-
-
Grigorov, K.G.1
Grigorov, G.I.2
Stoyanova, M.3
Vignes, J.L.4
Langeron, J.P.5
Denjean, P.6
Perriere, J.7
-
27
-
-
52949110564
-
Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering
-
T. Nakano, K. Hoshi, and S. Baba Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering Vacuum 83 3 2008 467
-
(2008)
Vacuum
, vol.83
, Issue.3
, pp. 467
-
-
Nakano, T.1
Hoshi, K.2
Baba, S.3
-
28
-
-
33746507942
-
Effects of nitrogen concentration on structural and electrical properties of titanium nitride for thin-film resistor applications
-
N.D. Cuong, D.-J. Kim, B.-D. Kang, and S.-G. Yoon Effects of nitrogen concentration on structural and electrical properties of titanium nitride for thin-film resistor applications Electrochem. Solid-State 9 9 2006 G279
-
(2006)
Electrochem. Solid-State
, vol.9
, Issue.9
, pp. G279
-
-
Cuong, N.D.1
Kim, D.-J.2
Kang, B.-D.3
Yoon, S.-G.4
-
29
-
-
0031098092
-
Characterization of titanium nitride films prepared by D.C. Reactive magnetron sputtering at different nitrogen pressures
-
L.-J. Meng, and M.D. Santos Characterization of titanium nitride films prepared by d.c. reactive magnetron sputtering at different nitrogen pressures Surf. Coat. Technol. 90 no. 1-2 1997 64
-
(1997)
Surf. Coat. Technol.
, vol.90
, Issue.1-2
, pp. 64
-
-
Meng, L.-J.1
Santos, M.D.2
-
30
-
-
0023436742
-
Plasma conditions for the deposition of tin by biased activated reactive evaporation and dependence of the resistivity on preferred orientation
-
B. Hahn, J. Jun, and J. Joo Plasma conditions for the deposition of tin by biased activated reactive evaporation and dependence of the resistivity on preferred orientation Thin Solid Films 153 13 1987 115
-
(1987)
Thin Solid Films
, vol.153
, Issue.13
, pp. 115
-
-
Hahn, B.1
Jun, J.2
Joo, J.3
|