Nanoscale TiN metal gate technology for CMOS integration

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1551-1554

  Lemme, M C ^a   Efavi, J K ^a   Mollenhauer, T ^a   Schmidt, M ^a   Gottlob, H D B ^a   Wahlbrink, T ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

Metal gate; Nanoelectronics; Nanostructuring; RIE etching; TiN

Indexed keywords

ANISOTROPY; CMOS INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; STOICHIOMETRY;

METAL GATE; NANOELECTRONICS; RIE ETCHING;

TITANIUM NITRIDE;

EID: 33646019270     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.161     Document Type: Article

References (9)

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