Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition

Physica B: Condensed Matter

Volumn 307, Issue 1-4, 2001, Pages 150-157

  Lal, K ^a   Meikap, A K ^a   Chattopadhyay, S K ^a   Chatterjee, S K ^a   Ghosh, M ^b   Baba, K ^c   Hatada, R ^c  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b Ramananda College   (India)

^c Technology Center of Nagasaki   (Japan)

Author keywords

Electrical resistivity; Electron phonon scattering; Ion beam assisted deposition; Titanium nitride

Indexed keywords

ELECTRIC CONDUCTIVITY; FILM PREPARATION; ION BEAM ASSISTED DEPOSITION; PARTIAL PRESSURE; THERMAL EFFECTS; TITANIUM NITRIDE;

RESIDUAL RESISTIVITIES;

THIN FILMS;

EID: 0035576859     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00626-3     Document Type: Article

References (37)