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Volumn 48, Issue 11, 2009, Pages

Device performance and reliability characteristics of tantalum-silicon- nitride electrode/hafnium oxide n-type metal-oxide-semiconductor field-effect transistor depending on electrode composition

(6) Park, Hokyung a,c Chang, Man a Jo, Minseok a Choi, Rino b Lee, Byoung Hun a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Inha University (South Korea)

c SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING MEASUREMENTS; DEVICE PERFORMANCE; ELECTRICAL PROPERTY; ELECTRODE COMPOSITION; GATE ELECTRODES; HIGH TEMPERATURE PROCESS; INTERFACE RELIABILITY; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NMOSFET; NMOSFETS; RELIABILITY CHARACTERISTICS; RELIABILITY DEGRADATION; SILICON CONTENTS;

DEGRADATION; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRODES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM OXIDES; MOSFET DEVICES; NITRIDES; RELIABILITY; SEMICONDUCTING SILICON; TANTALUM; TANTALUM ALLOYS;

TANTALUM OXIDES;

EID: 73849083890 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.116506 Document Type: Article

Times cited : (7)

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