Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies

Journal of Applied Physics

Volumn 117, Issue 9, 2015, Pages

  Kormondy, Kristy J ^a   Posadas, Agham B ^a   Ngo, Thong Q ^b   Lu, Sirong ^c   Goble, Nicholas ^d   Jordan Sweet, Jean ^e   Gao, Xuan P A ^d   Smith, David J ^c   McCartney, Martha R ^c   Ekerdt, John G ^b   Demkov, Alexander A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b The University of Texas at Austin   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d CASE WESTERN RESERVE UNIVERSITY   (United States)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; ELECTRONS; GAMMA RAYS; HALL MOBILITY; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; OXYGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TWO DIMENSIONAL ELECTRON GAS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTIVE LAYER; ELECTRICAL CHARACTERIZATION; OXYGEN DEFICIENT; QUASI-TWO-DIMENSIONAL ELECTRON GAS; ROOM TEMPERATURE; ROOM TEMPERATURE MOBILITY; SHEET CARRIER DENSITIES; SITU X-RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN VACANCIES;

EID: 84924272544     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4913860     Document Type: Article

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