Creation and control of two-dimensional electron gas using Al-based amorphous oxides/SrTiO 3 heterostructures grown by atomic layer deposition

Nano Letters

Volumn 12, Issue 9, 2012, Pages 4775-4783

  Lee, Sang Woon ^a   Liu, Yiqun ^a,b   Heo, Jaeyeong ^a,c   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

^c Chonnam National University   (South Korea)

Author keywords

2 D electron gas; Al 2O 3; amorphous; atomic layer deposition (ALD); LaAlO 3; oxygen vacancy; SrTiO 3

Indexed keywords

AL-BASED AMORPHOUS; AMORPHOUS LAYER; LAALO 3; MASS PRODUCTION; OXIDE ELECTRONICS; OXIDE LAYER; POTENTIAL APPLICATIONS; SRTIO; TRIMETHYLALUMINUM;

ALUMINUM; AMORPHOUS MATERIALS; ELECTRON GAS; ELECTRON MOBILITY; LANTHANUM ALLOYS; OXYGEN VACANCIES; PEROVSKITE; STRONTIUM TITANATES; TWO DIMENSIONAL;

ATOMIC LAYER DEPOSITION;

ALUMINUM; NANOMATERIAL; STRONTIUM; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; METHODOLOGY; PARTICLE SIZE; PLASMA GAS; ULTRASTRUCTURE;

ALUMINUM; CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; PLASMA GASES; STRONTIUM; TITANIUM;

EID: 84866307857     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302214x     Document Type: Article

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