Structural, optical, and electrical properties of strained La-doped SrTiO3 films

Journal of Applied Physics

Volumn 116, Issue 4, 2014, Pages

  Choi, Miri ^a   Posadas, Agham B ^a   Rodriguez, Cesar A ^b   O'Hara, Andrew ^a   Seinige, Heidi ^a   Kellock, Andrew J ^c   Frank, Martin M ^d   Tsoi, Maxim ^a   Zollner, Stefan ^b   Narayanan, Vijay ^d   Demkov, Alexander A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b New Mexico State University   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANUM ALLOYS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS;

BURSTEIN-MOSS SHIFT; DENSITY OF STATE; DIFFERENT SUBSTRATES; EPITAXIAL THIN FILMS; FIRST-PRINCIPLES CALCULATION; ROOM TEMPERATURE MOBILITY; ROOM-TEMPERATURE RESISTIVITY; STRUCTURAL AND OPTICAL PROPERTIES;

STRONTIUM TITANATES;

EID: 84905837035     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4891225     Document Type: Article

References (65)

1. M. A. Saifi and L. E. Cross, Phys. Rev. B 2, 677 (1970). 10.1103/PhysRevB.2.677
2. T. Sakudo and H. Unoki, Phys. Rev. Lett. 26, 851 (1971). 10.1103/PhysRevLett.26.851
3. K. Ueno, S. Nakamura, H. Shimotani, A. Ohtomo, N. Kimura, T. Nojima, H. Aoki, Y. Iwasa, and M. Kawasaki, Nature Mater. 7, 855 (2008). 10.1038/nmat2298
4. K. C. Chiang, C. C. Huang, G. L. Chen, W. J. Chen, H. L. Kao, Y. H. Wu, A. Chin, and S. P. McAlister, IEEE Trans. Electron Devices 53, 2312 (2006). 10.1109/TED.2006.881013
5. M. Kahn, C. Vallee, E. Defay, C. Dubourdieu, M. Bonvalot, S. Blonkowski, J.-R. Plaussu, P. Garrec, and T. Baron, Microelectron. Reliab. 47, 773 (2007). 10.1016/j.microrel.2007.01.029
6. A. Eriksson, A. Deleniv, and S. Gevorgian, J. Appl. Phys. 93, 2848 (2003). 10.1063/1.1536014
7. D. Fuchs, C. W. Schneider, R. Schneider, and H. Rietschel, J. Appl. Phys. 85, 7362 (1999). 10.1063/1.369363
8. Y. Hu, O. K. Tan, J. S. Pan, and X. Yao, J. Phys. Chem. B 108, 11214 (2004). 10.1021/jp048973z
9. A. Ohtomo and H. Y. Hwang, Appl. Phys. Lett. 84, 1716 (2004). 10.1063/1.1668329
10. L. Li, C. Richter, J. Mannhart, and R. C. Ashoori, Nat. Phys. 7, 762 (2011). 10.1038/nphys2080
11. J. Biscaras, N. Bergeal, A. Kushwaha, T. Wolf, A. Rastogi, R. C. Budhani, and J. Lesueur, Nat. Commun. 1, 89 (2010). 10.1038/ncomms1084
12. P. Moetakef, C. A. Jackson, J. Hwang, L. Balents, S. J. Allen, and S. Stemmer, Phys. Rev. B 86, 201102 (2012). 10.1103/PhysRevB.86.201102
13. K. Yoshimatsu, K. Horiba, H. Kumigashira, T. Yoshida, A. Fujimori, and M. Oshima, Science 333, 319 (2011). 10.1126/science.1205771
14. O. N. Tufte and P. W. Chapman, Phys. Rev. B 155, 796 (1967). 10.1103/PhysRev.155.796
15. H. P. R. Frederikse and W. R. Hosler, Phys. Rev. 161, 822 (1967). 10.1103/PhysRev.161.822
16. S. Ohta, T. Nomura, H. Ohta, M. Hirano, H. Hosono, and K. Koumoto, in Proceedings of the ICT 2005 24th International Conference on Thermoelectrics, Clemson, SC (IEEE, 2005), p. 168. 10.1109/ICT.2005.1519914
17. W. H. Gong, H. Yun, Y. B. Ning, J. E. Greedan, W. R. Datars, and C. V. Stager, J. Solid State Chem. 90, 320 (1991). 10.1016/0022-4596(91)90149-C
18. J. Ravichandran, W. Siemons, M. L. Scullin, S. Mukerjee, M. Huijben, J. E. Moore, A. Majumdar, and R. Ramesh, Phys. Rev. B 83, 035101 (2011). 10.1103/PhysRevB.83.035101
19. J. D. Baniecki, M. Ishii, H. Aso, K. Kurihara, and D. Ricinschi, J. Appl. Phys. 113, 049901 (2013). 10.1063/1.4789781
20. J. Son, P. Moetakef, B. Jalan, O. Bierwagen, N. J. Wright, R. Engel-Herbert, and S. Stemmer, Nature Mater. 9, 482 (2010). 10.1038/nmat2750
21. T. A. Cain, A. P. Kajdos, and S. Stemmer, Appl. Phys. Lett. 102, 182101 (2013). 10.1063/1.4804182
22. S. R. S. Kumar, A. I. Abutaha, M. N. Hedhili, and H. N. Alshareef, J. Appl. Phys. 112, 114104 (2012). 10.1063/1.4767840
23. J. Ravichandran, W. Siemons, H. Heijmerikx, M. Huijben, A. Majumdar, and R. Ramesh, Chem. Mater. 22, 3983 (2010). 10.1021/cm1005604
24. J. E. Sunstrom, S. M. Kauzlarich, and P. Klavins, Chem. Mater. 4, 346 (1992). 10.1021/cm00020a022
25. A. Biswas, N. Li, M. H. Jung, Y. W. Lee, J. S. Kim, and Y. H. Jeong, J. Appl. Phys. 113, 183711 (2013). 10.1063/1.4804664
26. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998). 10.1103/PhysRevLett.81.3014
27. B. T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J. H. Haeni, D. G. Schlom, W. Tian, X. Q. Pan, F. J. Walker, and R. A. McKee, Appl. Phys. Lett. 80, 4801 (2002). 10.1063/1.1484552
28. F. Pan, D. Olaya, J. C. Price, and C. T. Rogers, Appl. Phys. Lett. 84, 1573 (2004). 10.1063/1.1651647
29. D. J. Frank, P. M. Solomon, C. Dubourdieu, M. M. Frank, V. Narayanan, and T. N. Theis, IEEE Trans. Electron Devices 61, 2145 (2014). 10.1109/TED.2014. 2314652
30. S. Salahuddin and S. Dattat, Nano Lett. 8, 405 (2008). 10.1021/nl071804g
31. R. Oberhuber, G. Zandler, and P. Vogl, Phys. Rev. B 58, 9941 (1998). 10.1103/PhysRevB.58.9941
32. A. Janotti, D. Steiauf, and C. G. Van de Walle, Phys. Rev. B 84, 201304 (2011). 10.1103/PhysRevB.84.201304
33. B. Jalan, S. J. Allen, G. E. Beltz, P. Moetakef, and S. Stemmer, Appl. Phys. Lett. 98, 132102 (2011). 10.1063/1.3571447
34. Y. J. Chang, G. Khalsa, L. Moreschini, A. L. Walter, A. Bostwick, K. Horn, A. H. MacDonald, and E. Rotenberg, Phys. Rev. B 87, 115212 (2013). 10.1103/PhysRevB.87.115212
35. L. J. V. D. Pauw, Philips Res. Rep. 13, 1 (1958).
36. S. Zollner, A. A. Demkov, R. Liu, P. L. Fejes, R. B. Gregory, P. Alluri, J. A. Curless, Z. Yu, J. Ramdani, R. Droopad, T. E. Tiwald, J. N. Hilfiker, and J. A. Woollam, J. Vac. Sci. Technol., B 18, 2242 (2000). 10.1116/1.1303741
37. S. Zollner, A. A. Demkov, R. Liu, J. A. Curless, Z. Yu, J. Ramdani, and R. Droopad, in Recent Developments in Oxide and Metal Epitaxy-Theory and Experiment, edited by M. Yeadon, S. Chiang, R. F. C. Farrow, J. W. Evans, and O. Auciello (Materials Research Society, Warrendale, 2000), Vol. 619, p. 167.
38. H. G. Tompkins and W. A. McGahan, Spectroscopic Ellipsometry and Reflectometry: A User's Guide (Wiley, New York, 1999).
39. H. Tompkins and E. A. Irene, Handbook of Ellipsometry (William Andrew, 2005).
40. 3 from Fourier-transform infrared ellipsometry," Thin Solid Films (in press).
41. R. Moos and K. H. Hardtl, J. Am. Ceram. Soc. 80, 2549 (1997). 10.1111/j.1151-2916.1997.tb03157.x
42. C. D. Wagner, L. E. Davis, M. V. Zeller, J. A. Taylor, R. H. Raymond, and L. H. Gale, Surf. Interface Anal. 3, 211 (1981). 10.1002/sia.740030506
43. A. Janotti, B. Jalan, S. Stemmer, and C. G. Van de Walle, Appl. Phys. Lett. 100, 262104 (2012). 10.1063/1.4730998
44. S. Piskunov, E. Heifets, R. I. Eglitis, and G. Borstel, Comput. Mater. Sci. 29, 165 (2004). 10.1016/j.commatsci.2003.08.036
45. A. M. Kaiser, A. X. Gray, G. Conti, B. Jalan, A. P. Kajdos, A. Gloskovskii, S. Ueda, Y. Yamashita, K. Kobayashi, W. Drube, S. Stemmer, and C. S. Fadley, Appl. Phys. Lett. 100, 261603 (2012). 10.1063/1.4731642
46. N. G. Eror and U. Balachandran, J. Solid State Chem. 40, 85 (1981). 10.1016/0022-4596(81)90365-0
47. J. S. Jeong, P. Ambwani, B. Jalan, C. Leighton, and K. A. Mkhoyan, ACS Nano 7, 4487 (2013). 10.1021/nn401101y
48. M. D. McDaniel, A. Posadas, T. Q. Ngo, C. M. Karako, J. Bruley, M. M. Frank, V. Narayanan, A. A. Demkov, and J. G. Ekerdt, J. Appl. Phys. 115, 224108 (2014). 10.1063/1.4883767
49. W. Siemons, G. Koster, H. Yamamoto, T. H. Geballe, D. H. A. Blank, and M. R. Beasley, Phys. Rev. B 76, 155111 (2007). 10.1103/PhysRevB.76.155111
50. J. Humlicek, R. Henn, and M. Cardona, Appl. Phys. Lett. 69, 2581 (1996). 10.1063/1.117706
51. A. Walsh, J. L. F. Da Silva, and S. H. Wei, Phys. Rev. B 78, 075211 (2008). 10.1103/PhysRevB.78.075211
52. S. Ohta, T. Nomura, H. Ohta, and K. Koumoto, J. Appl. Phys. 97, 034106 (2005). 10.1063/1.1847723
53. W. Wunderlich, H. Ohta, and K. Koumoto, Physica B 404, 2202 (2009). 10.1016/j.physb.2009.04.012
54. M. L. Scullin, C. Yu, M. Huijben, S. Mukerjee, J. Seidel, Q. Zhan, J. Moore, A. Majumdar, and R. Ramesh, Appl. Phys. Lett. 92, 202113 (2008). 10.1063/1.2916690
55. G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
56. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
57. P. E. Blochl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50.17953
58. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). 10.1103/PhysRevB.59.1758
59. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
60. P. E. Blochl, O. Jepsen, and O. K. Andersen, Phys. Rev. B 49, 16223 (1994). 10.1103/PhysRevB.49.16223
61. C. B. Vining, J. Appl. Phys. 69, 331 (1991). 10.1063/1.347717
62. V. I. Fistul', Heavily Doped Semiconductors (Plenum Press, 1969).
63. X. Sun, M. Lundstrom, and R. Kim, " FD integral calculator," http://nanohub.org/tools/fdical (2011).
64. R. Kim and M. Lundstrom, preprint arXiv:0811.0116 (2008).
65. G. K. H. Madsen and D. J. Singh, Comput. Phys. Commun. 175, 67 (2006). 10.1016/j.cpc.2006.03.007