Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization

Journal of Applied Physics

Volumn 115, Issue 24, 2014, Pages

  Kormondy, Kristy J ^a   Posadas, Agham B ^a   Slepko, Alexander ^a,e   Dhamdhere, Ajit ^b   Smith, David J ^b   Mitchell, Khadijih N ^c   Willett Gies, Travis I ^c   Zollner, Stefan ^c   Marshall, Luke G ^d   Zhou, Jianshi ^d   Demkov, Alexander A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c New Mexico State University   (United States)

^d The University of Texas at Austin   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; CARBON MONOXIDE; ELECTRONIC STRUCTURE; ELLIPSOMETRY; EPITAXIAL GROWTH; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTIFERROMAGNETIC ORDERINGS; CARBON MONOXIDE CONVERSION; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; INFRARED-ACTIVE PHONON; INTER-BAND TRANSITION; POLAR SEMICONDUCTORS; SURFACES AND INTERFACES; VALENCE BAND OFFSETS;

COBALT;

EID: 84903831278     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4885048     Document Type: Article

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