SCOPUS 정보 검색 플랫폼

Volumn 117, Issue 2, 2015, Pages

Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

(3) Shasti, M a Mortezaali, A a Dariani, R S a

a ALZAHRA UNIVERSITY (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; HETEROJUNCTIONS; OPTICAL FILMS; PHOTODETECTORS; PHOTODIODES; PHOTONS;

AL-CONCENTRATION; ALUMINUM-DOPED ZINC OXIDE; CARRIER TRANSPORT MECHANISMS; CRYSTALLINE STRUCTURE; HETEROJUNCTION PHOTODIODES; PHOTORESPONSES; SPRAY PYROLYSIS METHOD; UV ILLUMINATIONS;

SPRAY PYROLYSIS;

EID: 84923683535 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4905416 Document Type: Article

Times cited : (27)

References (50)

1
- 25144462707
- U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
- (2005) J. Appl. Phys. , vol.98
- Ozgur, U.¹ Alivov, Y.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Dogan, S.⁶ Avrutin, V.⁷ Cho, S.J.⁸ Morkoc, H.⁹

2
- 0032049094
- P. Mitra, A. P. Chatterjee, and H. S. Maiti, Mater. Lett. 35, 33 (1998). 10.1016/S0167-577X(97)00215-2
- (1998) Mater. Lett. , vol.35 , pp. 33
- Mitra, P.¹ Chatterjee, A.P.² Maiti, H.S.³

3
- 0037116561
- P. Duran, F. Capel, J. Tartaj, and C. Moure, Adv. Mater. 14, 137 (2002). 10.1002/1521-4095(20020116)14:2<137::AID-ADMA137>3.0.CO;2-7
- (2002) Adv. Mater. , vol.14 , pp. 137
- Duran, P.¹ Capel, F.² Tartaj, J.³ Moure, C.⁴

4
- 33748086814
- A. A. Ibrahim and A. Ashour, J. Mater. Sci.: Mater. Electron. 17, 835 (2006).
- (2006) J. Mater. Sci.: Mater. Electron. , vol.17 , pp. 835
- Ibrahim, A.A.¹ Ashour, A.²

5
- 77956883932
- L. Shen, Z. Q. Ma, C. Shen, F. Li, B. He, and F. Xu, Superlattices Microstruct. 48, 426 (2010). 10.1016/j.spmi.2010.08.007
- (2010) Superlattices Microstruct. , vol.48 , pp. 426
- Shen, L.¹ Ma, Z.Q.² Shen, C.³ Li, F.⁴ He, B.⁵ Xu, F.⁶

6
- 62149097477
- E. Neshataeva, T. Kummell, G. Bacher, and A. Ebbers, Appl. Phys. Lett. 94, 091115 (2009). 10.1063/1.3093675
- (2009) Appl. Phys. Lett. , vol.94
- Neshataeva, E.¹ Kummell, T.² Bacher, G.³ Ebbers, A.⁴

7
- 0004005306
- 2nd ed. (Wiley, New York)
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 751.
- (1981) Physics of Semiconductor Devices , pp. 751
- Sze, S.M.¹

8
- 77952102442
- B. Gupta, A. Jain, and R. M. Mehra, J. Mater. Sci. Technol. 26, 223 (2010). 10.1016/S1005-0302(10)60037-0
- (2010) J. Mater. Sci. Technol. , vol.26 , pp. 223
- Gupta, B.¹ Jain, A.² Mehra, R.M.³

9
- 77957723193
- W. Yang, Z. Wu, Z. Liu, A. Pang, Y. L. Tu, and C. Feng, Thin Solid Films 519, 31 (2010). 10.1016/j.tsf.2010.07.048
- (2010) Thin Solid Films , vol.519 , pp. 31
- Yang, W.¹ Wu, Z.² Liu, Z.³ Pang, A.⁴ Tu, Y.L.⁵ Feng, C.⁶

10
- 34248595476
- K. W. Liu, J. G. Ma, J. Y. Zhang, Y. M. Lu, D. Y. Jiang, B. H. Li, D. X. Zhao, Z. Z. Zhang, B. Yao, and D. Z. Shen, Solid-State Electron. 51, 757 (2007). 10.1016/j.sse.2007.03.002
- (2007) Solid-State Electron. , vol.51 , pp. 757
- Liu, K.W.¹ Ma, J.G.² Zhang, J.Y.³ Lu, Y.M.⁴ Jiang, D.Y.⁵ Li, B.H.⁶ Zhao, D.X.⁷ Zhang, Z.Z.⁸ Yao, B.⁹ Shen, D.Z.¹⁰

11
- 77951589467
- C. X. Shan, J. Y. Zhang, B. Yao, D. Z. Shen, and X. W. Fan, J. Vac. Sci. Technol. B 27, 1765 (2009). 10.1116/1.3098502
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1765
- Shan, C.X.¹ Zhang, J.Y.² Yao, B.³ Shen, D.Z.⁴ Fan, X.W.⁵

12
- 33646523438
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, Appl. Phys. Lett. 88, 182112 (2006). 10.1063/1.2201895
- (2006) Appl. Phys. Lett. , vol.88
- Ye, J.D.¹ Gu, S.L.² Zhu, S.M.³ Liu, W.⁴ Zhang, R.⁵ Shi, Y.⁶ Zheng, Y.D.⁷

13
- 84878051829
- N. Kheirandish and A. Mortezaali, J. Appl. Phys. 113, 183103 (2013). 10.1063/1.4804330
- (2013) J. Appl. Phys. , vol.113
- Kheirandish, N.¹ Mortezaali, A.²

14
- 77955485072
- D. Kim, I. Yun, and H. Kim, Curr. Appl. Phys. 10, S459 (2010). 10.1016/j.cap.2010.02.030
- (2010) Curr. Appl. Phys. , vol.10 , pp. S459
- Kim, D.¹ Yun, I.² Kim, H.³

15
- 34447557873
- L. J. Mandalapu, F. X. Xiu, Z. Yang, and J. L. Liu, Solid-State Electron. 51, 1014 (2007). 10.1016/j.sse.2007.05.009
- (2007) Solid-State Electron. , vol.51 , pp. 1014
- Mandalapu, L.J.¹ Xiu, F.X.² Yang, Z.³ Liu, J.L.⁴

16
- 75349109875
- M. A. Yildirim and A. Ates, Opt. Commun. 283, 1370 (2010). 10.1016/j.optcom.2009.12.009
- (2010) Opt. Commun. , vol.283 , pp. 1370
- Yildirim, M.A.¹ Ates, A.²

17
- 61349127217
- J. A. Shackleford, R. Grote, M. Currie, J. E. Spanier, and B. Nabet, Appl. Phys. Lett. 94, 083501 (2009). 10.1063/1.3086898
- (2009) Appl. Phys. Lett. , vol.94
- Shackleford, J.A.¹ Grote, R.² Currie, M.³ Spanier, J.E.⁴ Nabet, B.⁵

18
- 0004005306
- Wiley, New York
- S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 43.
- (1981) Physics of Semiconductor Devices , pp. 43
- Sze, S.M.¹

19
- 6144261628
- M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996). 10.1063/1.362677
- (1996) J. Appl. Phys. , vol.79 , pp. 7433
- Razeghi, M.¹ Rogalski, A.²

20
- 84865046533
- M. E. Swanwick, S. M.-L. Pfaendler, A. I. Akinwande, and A. J. Felwitt, Nanotechnology 23, 344009 (2012). 10.1088/0957-4484/23/34/344009
- (2012) Nanotechnology , vol.23
- Swanwick, M.E.¹ Pfaendler, S.M.-L.² Akinwande, A.I.³ Felwitt, A.J.⁴

21
- 84923679887
- S. Houng, J. Yeo, W. Manorotkul, G. Kim, J. Kwon, K. An, and S. H. Ko, J. Nanomater. 2013, 246328.
- J. Nanomater. , vol.2013
- Houng, S.¹ Yeo, J.² Manorotkul, W.³ Kim, G.⁴ Kwon, J.⁵ An, K.⁶ Ko, S.H.⁷

22
- 84957312759
- Y. Takashi, M. Kanamori, A. Kondoh, H. Minoura, and Y. Ohya, Jpn. J. Appl. Phys., Part 1 33, 6611 (1994). 10.1143/JJAP.33.6611
- (1994) Jpn. J. Appl. Phys., Part 1 , vol.33 , pp. 6611
- Takashi, Y.¹ Kanamori, M.² Kondoh, A.³ Minoura, H.⁴ Ohya, Y.⁵

23
- 34248140089
- C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. 7, 1003 (2007). 10.1021/nl070111x
- (2007) Nano Lett. , vol.7 , pp. 1003
- Soci, C.¹ Zhang, A.² Xiang, B.³ Dayeh, S.A.⁴ Aplin, D.P.R.⁵ Park, J.⁶ Bao, X.Y.⁷ Lo, Y.H.⁸ Wang, D.⁹

24
- 3042772787
- S. E. Ahn, J. S. Lee, H. Kim, S. Kim, B. H. Kang, K. H. Kim, and G. T. Kim, Appl. Phys. Lett. 84, 5022 (2004). 10.1063/1.1763633
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5022
- Ahn, S.E.¹ Lee, J.S.² Kim, H.³ Kim, S.⁴ Kang, B.H.⁵ Kim, K.H.⁶ Kim, G.T.⁷

25
- 82455192235
- N. Zebbar, Y. Kheireddine, K. Mokeddem, A. Hafdallah, M. Kechouane, and M. S. Aida, Mater. Sci. Semicond. Process. 14, 229 (2011). 10.1016/j.mssp.2011.03.001
- (2011) Mater. Sci. Semicond. Process. , vol.14 , pp. 229
- Zebbar, N.¹ Kheireddine, Y.² Mokeddem, K.³ Hafdallah, A.⁴ Kechouane, M.⁵ Aida, M.S.⁶

26
- 0142229525
- I. S. Jeong, J. H. Kim, and S. Im, Appl. Phys. Lett. 83, 2946 (2003). 10.1063/1.1616663
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2946
- Jeong, I.S.¹ Kim, J.H.² Im, S.³

27
- 0036997112
- Y. S. Choi, J. Y. Lee, W. H. Choi, H. W. Yeom, and S. Im, Jpn. J. Appl. Phys., Part 1 41, 7357 (2002). 10.1143/JJAP.41.7357
- (2002) Jpn. J. Appl. Phys., Part 1 , vol.41 , pp. 7357
- Choi, Y.S.¹ Lee, J.Y.² Choi, W.H.³ Yeom, H.W.⁴ Im, S.⁵

28
- 34247844469
- S. Mridha and D. Basak, J. Appl. Phys. 101, 083102 (2007). 10.1063/1.2724808
- (2007) J. Appl. Phys. , vol.101
- Mridha, S.¹ Basak, D.²

29
- 84862816772
- L. Gou, H. Zhang, D. Zhao, B. Li, Z. Zhang, M. Jiang, and D. Shenh, Sens. Actuators, B 166-167, 12 (2012).
- (2012) Sens. Actuators, B , vol.166-167 , pp. 12
- Gou, L.¹ Zhang, H.² Zhao, D.³ Li, B.⁴ Zhang, Z.⁵ Jiang, M.⁶ Shenh, D.⁷

30
- 47749145362
- R. A. Ismail, A. Al-Naimi, and A. Al-Ani, Semicond. Sci. Technol. 23, 075030 (2008). 10.1088/0268-1242/23/7/075030
- (2008) Semicond. Sci. Technol. , vol.23
- Ismail, R.A.¹ Al-Naimi, A.² Al-Ani, A.³

31
- 33845253333
- S. J. Young, L. W. Ji, S. J. Chang, and X. L. Du, J. Electrochem. Soc. 154 (1), H26-H29 (2007). 10.1149/1.2387058
- (2007) J. Electrochem. Soc. , vol.154 , Issue.1 , pp. H26-H29
- Young, S.J.¹ Ji, L.W.² Chang, S.J.³ Du, X.L.⁴

32
- 33748849124
- J. Young, L. W. Ji, R. W. Chuang, S. J. Chang, and X. L. Du, Semicond. Sci. Technol. 21, 1507 (2006). 10.1088/0268-1242/21/10/026
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 1507
- Young, J.¹ Ji, L.W.² Chuang, R.W.³ Chang, S.J.⁴ Du, X.L.⁵

33
- 31644435192
- S.-M. Park, T. Ikegami, and K. Ebihara, Jpn. J. Appl. Phys., Part 1 44, 8027-8031 (2005). 10.1143/JJAP.44.8027
- (2005) Jpn. J. Appl. Phys., Part 1 , vol.44 , pp. 8027-8031
- Park, S.-M.¹ Ikegami, T.² Ebihara, K.³

34
- 42249101876
- R. S. Ajimsha, M. K. Jayaraj, and L. M. Kukreja, J. Electron. Mater. 37, 770-775 (2008). 10.1007/s11664-007-0365-4
- (2008) J. Electron. Mater. , vol.37 , pp. 770-775
- Ajimsha, R.S.¹ Jayaraj, M.K.² Kukreja, L.M.³

35
- 0344083451
- J. J. Robbins and C. A. Wolden, Appl. Phys. Lett. 83, 3933 (2003). 10.1063/1.1625435
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3933
- Robbins, J.J.¹ Wolden, C.A.²

36
- 84855976394
- F. Zahedi and R. S. Dariani, Thin Solid Films 520, 2132-2135 (2012). 10.1016/j.tsf.2011.09.006
- (2012) Thin Solid Films , vol.520 , pp. 2132-2135
- Zahedi, F.¹ Dariani, R.S.²

37
- 36448996191
- S. Mridha and D. Basak, J. Phys. D: Appl. Phys. 40, 6902 (2007). 10.1088/0022-3727/40/22/008
- (2007) J. Phys. D: Appl. Phys. , vol.40 , pp. 6902
- Mridha, S.¹ Basak, D.²

38
- 84867877106
- M. H. Mamat, M. Z. Sahdan, Z. Khusaimi, and M. Rusop, J. Nanomater. 2012, 189279. 10.1155/2012/189279
- J. Nanomater. , vol.2012
- Mamat, M.H.¹ Sahdan, M.Z.² Khusaimi, Z.³ Rusop, M.⁴

39
- 84923679882
- M.Sc. thesis (Alzahra University)
- L. Sheikhi, " Fabrication of TCO layer by doping ZnO layer," M.Sc. thesis (Alzahra University, 2011).
- (2011) Fabrication of TCO Layer by Doping ZnO Layer
- Sheikhi, L.¹

40
- 84923259116
- T. Basu, M. Kumar, P. K. Sahoo, A. Kanjilal, and T. Som, Nanoscale Res. Lett. 9 (1), 192 (2014). 10.1063/1.2771050
- (2014) Nanoscale Res. Lett. , vol.9 , Issue.1 , pp. 192
- Basu, T.¹ Kumar, M.² Sahoo, P.K.³ Kanjilal, A.⁴ Som, T.⁵

41
- 0037103662
- A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118-2124 (2002). 10.1063/1.1483381
- (2002) J. Appl. Phys. , vol.92 , pp. 2118-2124
- Gokarna, A.¹ Pavaskar, N.R.² Sathaye, S.D.³ Ganesan, V.⁴ Bhoraskar, S.V.⁵

42
- 36849034347
- J. H. He and C. H. Ho, Appl. Phys. Lett. 91, 233105 (2007). 10.1063/1.2821831
- (2007) Appl. Phys. Lett. , vol.91
- He, J.H.¹ Ho, C.H.²

43
- 33751221005
- F. Yakuphanoglu, Physica B 388 (1/2), 226 (2007). 10.1016/j.physb.2006.05.430
- (2007) Physica B , vol.388 , Issue.1-2 , pp. 226
- Yakuphanoglu, F.¹

44
- 84893358622
- P. Hazra and S. Jit, J. Semicond. 35, 014001 (2014). 10.1088/1674-4926/35/1/014001
- (2014) J. Semicond. , vol.35
- Hazra, P.¹ Jit, S.²

45
- 84927553170
- C. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957). 10.1109/JRPROC.1957.278528
- (1957) Proc. IRE , vol.45 , pp. 1228
- Sah, C.¹ Noyce, R.N.² Shockley, W.³

46
- 79953224509
- Y. Feng, W. Hou, X. Zhang, P. Lv, Y. Li, and W. Feng, J. Phys. Chem. C 115, 3956-3961 (2011). 10.1021/jp1117745
- (2011) J. Phys. Chem. C , vol.115 , pp. 3956-3961
- Feng, Y.¹ Hou, W.² Zhang, X.³ Lv, P.⁴ Li, Y.⁵ Feng, W.⁶

47
- 36549051736
- D. D. Lin, H. Wu, and W. Pan, Adv. Mater. 19, 3968-3972 (2007). 10.1002/adma.200602802
- (2007) Adv. Mater. , vol.19 , pp. 3968-3972
- Lin, D.D.¹ Wu, H.² Pan, W.³

48
- 84889049639
- A. K. Srivastava and J. Kumar, Sci. Technol. Adv. Mater. 14, 065002 (2013). 10.1088/1468-6996/14/6/065002
- (2013) Sci. Technol. Adv. Mater. , vol.14
- Srivastava, A.K.¹ Kumar, J.²

49
- 78650158581
- B. K. Sharma and N. Khare, J. Phys. D: Appl. Phys. 43, 465402 (2010). 10.1088/0022-3727/43/46/465402
- (2010) J. Phys. D: Appl. Phys. , vol.43
- Sharma, B.K.¹ Khare, N.²

50
- 79151478115
- A. Bera, T. Ghosh, and D. Basak, ACS Appl. Mater. Interfaces 2 (10), 2898-2903 (2010). 10.1021/am1006047
- (2010) ACS Appl. Mater. Interfaces , vol.2 , Issue.10 , pp. 2898-2903
- Bera, A.¹ Ghosh, T.² Basak, D.³

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