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Volumn 83, Issue 19, 2003, Pages 3933-3935
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High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON AFFINITIES;
CRYSTAL STRUCTURE;
DOPING (ADDITIVES);
ENERGY GAP;
HIGH ELECTRON MOBILITY TRANSISTORS;
INTERFACES (MATERIALS);
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTOR QUANTUM WELLS;
THIN FILMS;
ELECTRON MOBILITY;
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EID: 0344083451
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1625435 Document Type: Article |
Times cited : (29)
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References (14)
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