Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes

Semiconductor Science and Technology

Volumn 21, Issue 10, 2006, Pages 1507-1511

  Young, S J ^a   Ji, L W ^b   Chuang, R W ^a   Chang, S J ^a   Du, X L ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRODES; PALLADIUM; QUANTUM EFFICIENCY; SPURIOUS SIGNAL NOISE; ZINC OXIDE;

BARRIER HEIGHT; METAL-SEMICONDUCTOR-METAL (MSM) PHOTODIODES; PALLADIUM CONTACT ELECTRODES;

PHOTODIODES;

EID: 33748849124     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/10/026     Document Type: Article

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