Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetector

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Ismail, Raid A ^a,b   Al Naimi, Ala ^a   Al Ani, Alaa A ^a  

^a UNIVERSITY OF TECHNOLOGY   (Iraq)

^b HADHRAMOUT UNIVERSITY   (Yemen)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL REACTIONS; CRACKING (CHEMICAL); ELECTRIC PROPERTIES; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PYROLYSIS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; ZINC OXIDE;

ANDERSON MODELS; CHEMICAL SPRAY PYROLYSIS (CSP); CURRENT VOLTAGE (I V) CHARACTERISTICS; CURRENT-VOLTAGE (C-V) MEASUREMENTS; ELECTRICAL (ELECTRONIC) PROPERTIES; HETERO JUNCTION; HETEROJUNCTION PHOTODETECTORS; HIGH RESPONSIVITY; IDEALITY FACTORS; PHOTO-RESPONSES; POST DEPOSITION; RAPID THERMAL ANNEALING (RTA); RESPONSIVITY; VISIBLE REGIONS;

SPRAY PYROLYSIS;

EID: 47749145362     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075030     Document Type: Article

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