Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

  Brom, Joseph E ^a   Ke, Yue ^a   Du, Renzhong ^a   Won, Dongjin ^a   Weng, Xiaojun ^a   Andre, Kalissa ^a   Gagnon, Jarod C ^a   Mohney, Suzanne E ^a   Li, Qi ^a   Chen, Ke ^b   Xi, X X ^b   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Temple University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH AMBIENT; HALL EFFECT MEASUREMENT; HIGH QUALITY; HYBRID PHYSICAL-CHEMICAL VAPOR DEPOSITION; PLANAR DEFECT; STRUCTURAL AND ELECTRICAL PROPERTIES; TOPOLOGICAL INSULATORS; TWIN BOUNDARIES; VARIABLE TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HALL MOBILITY; SAPPHIRE; THERMAL EVAPORATION; THIN FILMS; VAPORS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84859957421     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704680     Document Type: Article

References (15)

1. H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009). 10.1038/nphys1270
2. J. Moore, Nat. Phys. 5, 378 (2009). 10.1038/nphys1294
3. J. Navratil, J. Horak, T. Plechacek, S. Kamba, P. Lostak, J. Dyck, W. Chen, and C. Uher, J. Solid State Chem. 177, 1704 (2004). 10.1016/j.jssc.2003. 12.031
4. G. Zhang, H. Qin, J. Teng, J. Guo, Q. Guo, X. Dai, Z. Fang, and K. Wu, Appl. Phys. Lett. 95, 053114 (2009). 10.1063/1.3200237
5. D. Kong, J. C. Randel, H. Peng, J. J. Cha, S. Meister, K. Lai, Y. Chen, Z. X. Shen, H. C. Manoharan, and Y. Cui, Nano Lett. 10, 329 (2010). 10.1021/nl903663a
6. H. D. Li, Z. Y. Wang, X. Kan, X. Guo, H. T. He, Z. Wang, J. N. Wang, T. L. Wong, N. Wang, and M. H. Xie, New J. Phys. 12, 103038 (2010). 10.1088/1367-2630/12/10/103038
7. Y. S. Kim, M. Brahlek, N. Bansal, E. Edrey, G. A. Kapilevich, K. Iida, M. Tanimura, Y. Horibe, S. W. Cheong, and S. Oh, Phys. Rev. B 84, 073109 (2011). 10.1103/PhysRevB.84.073109
8. A. Richardella, D. M. Zhang, J. S. Lee, A. Koser, D. W. Rench, A. L. Yeats, B. B. Buckley, D. D. Awschalom, and N. Samarth, Appl. Phys. Lett. 97, 262104 (2010). 10.1063/1.3532845
9. C. L. Song, Y. L. Wang, Y. P. Jiang, Y. Zhang, C. Z. Chang, L. Wang, K. He, X. Chen, J. F. Jia, Y. Wang, Z. Fang, X. Dai, X. C. Xie, X. L. Qi, S. C. Zhang, Q. K. Xue, and X. C. Ma, Appl. Phys. Lett. 97, 143118 (2010). 10.1063/1.3494595
10. J. Wang, A. M. DaSilva, C.-Z. Chang, K. He, J. K. Jain, N. Samarth, X.-C. Ma, Q.-K. Xue, and M. H. W. Chan, Phys. Rev. B. 83, 245438 (2011). 10.1103/PhysRevB.83.245438
11. X. F. Kou, L. He, F. X. Xiu, M. R. Lang, Z. M. Liao, Y. Wang, A. V. Fedorov, X. X. Yu, J. S. Tang, G. Huang, X. W. Jiang, J. F. Zhu, J. Zou, and K. L. Wang, Appl. Phys. Lett. 98, 242102 (2011). 10.1063/1.3599540
12. P. Tabor, C. Keenan, S. Urazdhin, and D. Lederman, Appl. Phys. Lett. 99, 013111 (2011). 10.1063/1.3609326
13. J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. W. Li, and L. Lu, Phys. Rev. Lett. 105, 176602 (2010). 10.1103/PhysRevLett.105.176602
14. D. R. Lamborn, R. T. H. Wilke, Q. Li, X. X. Xi, D. W. Snyder, and J. M. Redwing, IEEE Trans. Appl. Supercond. 17, 2862 (2007). 10.1109/TASC.2007.897990
15. Z. Y. Wang, H. D. Li, X. Guo, W. K. Ho, and M. H. Xie, J. Crystal Growth 334, 96 (2011). 10.1016/j.jcrysgro.2011.08.029