Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

Thin Solid Films

Volumn 572, Issue , 2014, Pages 245-250

  Glavin, Nicholas R ^a,b   Jespersen, Michael L ^a,c   Check, Michael H ^a   Hu, Jianjun ^a,c   Hilton, Al M ^a,d   Fisher, Timothy S ^b   Voevodin, Andrey A ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b PURDUE UNIVERSITY   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^d WYLE Laboratories   (United States)

Author keywords

Hexagonal boron nitride; Nanoelectronics; Two dimensional materials

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; BORON NITRIDE; COLLISIONAL PLASMAS; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; IONIZATION OF GASES; NANOELECTRONICS; NITRIDES; NITROGEN; NITROGEN PLASMA; PULSED LASER DEPOSITION; PULSED LASERS; SAPPHIRE; SUBSTRATES;

COLLISIONAL IONIZATION; CONDENSATION SURFACE; DEPOSITION TEMPERATURES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HIGHLY ORDERED PYROLYTIC GRAPHITES; PROCESSING TECHNIQUE; TWO-DIMENSIONAL MATERIALS;

DEPOSITION;

EID: 85027927356     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.07.059     Document Type: Conference Paper

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