Nitrogen-doped ZnO/n-Si core-shell nanowire photodiode prepared by atomic layer deposition

Materials Science in Semiconductor Processing

Volumn 33, Issue , 2015, Pages 154-160

  Yong Ko, Kyung ^a   Kang, Hyemin ^a   Lee, Wonseon ^a   Lee, Chang Wan ^a   Park, Jusang ^a   Lee, Hee Sung ^a   Im, Seongil ^a   Kim, Han Gil ^b   Kim, Soo Hyun ^b   Min, Byung Wook ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Yeungnam University   (South Korea)

Author keywords

Atomic layer deposition; Core shell nanowires; Nitrogen doped ZnO; Photodiode

Indexed keywords

AMMONIUM HYDROXIDE; ATOMIC LAYER DEPOSITION; ATOMS; CARRIER CONCENTRATION; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; HETEROJUNCTIONS; NANOWIRES; NITROGEN; PHOTODIODES; SEMICONDUCTING SILICON; SHELLS (STRUCTURES); SILICON;

CORE-SHELL NANOWIRES; DEVICE PROPERTIES; NITROGEN-DOPED; OH CONCENTRATION; RECTIFICATION RATIO; REVERSE CURRENTS; SPECTRAL RESPONSIVITY; VERTICALLY ALIGNED;

ZINC OXIDE;

EID: 84923229171     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2015.02.004     Document Type: Article

References (41)

1. J.D. Albrecht, P.P. Ruden, S. Limpijumnong, W.R.L. Lambrecht, and K.F. Brennan J. Appl. Phys. 86 1999 6864
2. U. ÖzgÜr, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doʇan, V. Avrutin, S.-J. Cho, and H. Morkoç J. Appl. Phys. 98 2005 041301
3. S. Dhara, and P.K. Giri Thin Solid Films 520 2012 5000
4. J. Huang, S. Chu, J. Kong, L. Zhang, C.M. Schwarz, G. Wang, L. Chernyak, Z. Chen, and J. Liu Adv. Opt. Mater 1 2013 179
5. Y. Cao, L. Miao, S. Tanemura, M. Tanemura, Y. Kuno, and Y. Hayashi Appl. Phys. Lett. 88 2006 251116
6. J.J. Macías-Sánchez, L. Hinojosa-Reyes, A. Caballero-Quintero, W. de la Cruz, E. Ruiz-Ruiz, A. Hernández-Ramírez, and J.L. Guzmán-Mar Photochem. Photobiol. Sci. 2014
7. H. Kang, J. Park, T. Choi, H. Jung, K.H. Lee, S. Im, and H. Kim Appl. Phys. Lett. 100 2012 041117
8. L. Dunlop, A. Kursumovic, and J.L. MacManus-Driscoll Appl. Phys. Lett. 93 2008 172111
9. P. Fons, H. Tampo, A.V. Kolobov, M. Ohkubo, S. Niki, J. Tominaga, and S. Friedrich Phys. Rev. Lett. 96 2006 1
10. H. Kim, H.-B.-R. Lee, and W.-J. Maeng Thin Solid Films 517 2009 2563
11. J.-F. Chien, C.-H. Chen, J.-J. Shyue, and M.-J. Chen ACS Appl. Mater. Interfaces 4 2012 3471
12. K.Y. Ko, H. Kang, J. Park, B.-W. Min, H.S. Lee, S. Im, J.Y. Kang, J.-M. Myoung, J.-H. Jung, S.-H. Kim, and H. Kim Sens. Actuators A Phys 210 2014 197
13. W.-L. Min, B. Jiang, and P. Jiang Adv. Mater. 20 2008 3914
14. Y. Li, J. Zhang, S. Zhu, H. Dong, F. Jia, Z. Wang, Z. Sun, L. Zhang, Y. Li, H. Li, W. Xu, and B. Yang Adv. Mater. 21 2009 (NA.), 4731
15. D. Liu, X. Shen, T. Song, J. Hu, and B. Sun Phys. Chem. Chem. Phys. 15 2013 4970
16. K. Wang, J.J. Chen, Z.M. Zeng, J. Tarr, W.L. Zhou, Y. Zhang, Y.F. Yan, C.S. Jiang, J. Pern, and A. Mascarenhas Appl. Phys. Lett. 96 2010 123105
17. K.Y. Ko, H. Kang, J. Kim, W. Lee, H.S. Lee, S. Im, J.Y. Kang, J.-M. Myoung, H.-G. Kim, S.-H. Kim, and H. Kim Mater. Sci. Semicond. Process. 27 2014 297
18. N. Megouda, R. Douani, T. Hadjersi, and R. Boukherroub J. Lumin. 129 2009 1750
19. S.J. Lim, J.-M. Kim, D. Kim, S. Kwon, J.-S. Park, and H. Kim J. Electrochem. Soc. 157 2010 H214
20. D. Shao, M. Yu, J. Lian, and S. Sawyer Appl. Phys. Lett. 102 2013 021107
21. J. Kim, J.-H. Yun, Y.C. Park, and W.A. Anderson Mater. Lett. 75 2012 99
22. J. Yun, J. Kim, H.S. Kojori, S.J. Kim, C. Tong, and W.A. Anderson J. Nanosci. Nanotechnol. 13 2013 5547
23. D. Song, and B. Guo J. Phys. D. Appl. Phys 42 2009 025103
24. S.M. Sze Physics of Semiconductor Devices 2nd Ed. 1981 Wiley New York
25. J.C. Lin, Y.K. Su, S.J. Chang, W.H. Lan, K.C. Huang, W.R. Chen, C.Y. Huang, W.C. Lai, W.J. Lin, and Y.C. Cheng Appl. Phys. Lett. 91 2007 173502
26. Y. Wang, X.W. Sun, G.K.L. Goh, H.V. Demir, and H.Y. Yu IEEE Trans. Electron Devices 58 2011 480
27. J.Y. Park, S.-W. Choi, and S.S. Kim J. Phys. D. Appl. Phys. 44 2011 205403
28. C.L. Perkins, S.-H. Lee, X. Li, S.E. Asher, and T.J. Coutts J. Appl. Phys. 97 2005 034907
29. B.M. Kayes, H.A. Atwater, and N.S. Lewis J. Appl. Phys. 97 2005 114302
30. D. Bouhafs, A. Moussi, A. Chikouche, and J.M. Ruiz Sol. Energy Mater. Sol. Cells 52 1998 79
31. S.-H. Baek, S.-B. Kim, J.-K. Shin, and J. Hyun Kim Sol. Energy Mater. Sol. Cells 96 2012 251
32. C. Cheng, T.-L. Wang, L. Feng, W. Li, K.M. Ho, M.M.T. Loy, K.K. Fung, and N. Wang Nanotechnology 21 2010 475703
33. J. Bae, H. Kim, X.-M. Zhang, C.H. Dang, Y. Zhang, Y.J. Choi, A. Nurmikko, and Z.L. Wang Nanotechnology 21 2010 095502
34. E. Guziewicz, I.A. Kowalik, M. Godlewski, K. Kopalko, V. Osinniy, A. WoÍjcik, S. Yatsunenko, E. Łusakowska, W. Paszkowicz, and M. Guziewicz J. Appl. Phys. 103 2008 033515
35. Y.R. Ryu, T.S. Lee, J.A. Lubguban, H.W. White, Y.S. Park, and C.J. Youn Appl. Phys. Lett. 87 2005 153504
36. S.-M. Peng, Y.-K. Su, L.-W. Ji, C.-Z. Wu, W.-B. Cheng, and W.-C. Chao J. Phys. Chem. C 114 2010 3204
37. S. Su, X. Yang, and C. Hu J. Semicond. 32 2011 074008
38. P. Wu, Y. Dai, Y. Ye, Y. Yin, and L. Dai J. Mater. Chem. 21 2011 2563
39. J.-J. Wang, F.-F. Cao, L. Jiang, Y.-G. Guo, W.-P. Hu, and L.-J. Wan J. Am. Chem. Soc. 131 2009 15602
40. J.S. Jie, W.J. Zhang, Y. Jiang, X.M. Meng, Y.Q. Li, and S.T. Lee Nano Lett. 6 2006 1887
41. F. Zhang, S. Niu, W. Guo, G. Zhu, Y. Liu, X. Zhang, and Z.L. Wang ACS Nano 7 2013 4537