Electrical properties and carrier transport mechanisms of n-ZnO/SiO x/n-Si isotype heterojunctions with native or thermal oxide interlayers

Journal of Physics D: Applied Physics

Volumn 42, Issue 2, 2009, Pages

  Song, Dengyuan ^a   Guo, Baozeng ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b HEBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; COMPOSITE FILMS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; METALLIC FILMS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ATOMIC FORCES; CAPACITANCE VOLTAGES; CRYSTALLINE SILICONS; CURRENT TRANSPORT MECHANISMS; CURRENT VOLTAGES; ELECTRICAL PROPERTIES; ISOTYPE HETEROJUNCTIONS; LOW-LEAKAGE CURRENTS; MEASUREMENT DATUM; NATIVE OXIDES; OXIDE LAYERS; PACKED GRAINS; PREFERRED ORIENTATIONS; RECTIFICATION RATIOS; SERIES RESISTANCES; SI SUBSTRATES; THERMAL OXIDES; TRANSPORT MECHANISMS; VOLTAGE RANGES; X-RAY DIFFRACTION SPECTROSCOPIES; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZNO FILMS;

ELECTRIC RECTIFIERS;

EID: 63649108248     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/2/025103     Document Type: Article

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