Influence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 480-485

  Wang, Ye ^a   Sun, Xiao Wei ^a,b   Goh, Gregory Kia Liang ^c   Demir, Hilmi Volkan ^d,e   Yu, Hong Yu ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b TIANJIN UNIVERSITY   (China)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e BILKENT UNIVERSITY   (Turkey)

Author keywords

Film thickness; In Ga Zn oxide (IGZO); inkjet printing; thin film transistors (TFTs)

Indexed keywords

BOTTOM-CONTACT; CHANNEL LAYERS; DEPLETION LAYER; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; IN-GA-ZN OXIDE (IGZO); OFF-CURRENT; ON/OFF RATIO; SATURATION REGION; SUBTHRESHOLD SWING;

DRAIN CURRENT; GALLIUM; INK; INK JET PRINTERS; INK JET PRINTING; OXYGEN; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; ZINC;

THIN FILM TRANSISTORS;

EID: 79151483154     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2091131     Document Type: Article

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