Heterojunction photodiode fabricated from multiwalled carbon nanotube/ZnO nanowire/p-silicon composite structure

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Shao, Dali ^a   Yu, Mingpeng ^a,b   Lian, Jie ^a   Sawyer, Shayla ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COLLECTION; HETEROJUNCTION PHOTODIODES; INTERFACIAL REGION; RESPONSIVITY; SPECTRAL RESPONSE; TRANSPORT EFFICIENCY; VALANCE BANDS; VOLTAGE POLARITY; ZNO;

DIODES; HETEROJUNCTIONS; MULTIWALLED CARBON NANOTUBES (MWCN); SILICON; STRUCTURE (COMPOSITION); ZINC OXIDE;

PHOTODIODES;

EID: 84872696824     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4776691     Document Type: Article

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