Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene

Nano Letters

Volumn 15, Issue 2, 2015, Pages 896-902

  Yu, Young Jun ^a   Kim, Keun Soo ^b   Nam, Jungtae ^b   Kwon, Se Ra ^c   Byun, Hyeryoung ^c   Lee, Kwanjae ^d   Ryou, Jae Hyun ^e   Dupuis, Russell D ^f   Kim, Jeomoh ^f   Ahn, Gwanghyun ^g   Ryu, Sunmin ^g   Ryu, Mee Yi ^c   Kim, Jin Soo ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Sejong University   (South Korea)

^c Kangwon National University   (South Korea)

^d Chonbuk National University   (South Korea)

^e University of Houston   (United States)

^f GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^g Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

free exciton; graphene; localized exciton; Resonance energy transfer; semiconductor quantum well; temperature dependence

Indexed keywords

ENERGY TRANSFER; EXCITONS; FILM GROWTH; GRAPHENE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; RESONANCE; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; TEMPERATURE DISTRIBUTION;

ENERGY INTERACTIONS; EXCITON RECOMBINATION; FREE EXCITONS; LOCALIZED EXCITON; RESONANCE ENERGY TRANSFER; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TRANSPARENT ELECTRODE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84922821651     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl503624j     Document Type: Article

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