Raman study of biaxial strain in InGaN-GaN self-assembled quantum dots grown on sapphire (0001)

Institute of Physics Conference Series

Volumn 184, Issue , 2005, Pages 451-454

  Ji, L W ^a   Lam, K T ^b   Su, Y K ^c   Kao, Y K ^b   Diao, C C ^a   Liao, F C ^a  

^a KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

^b LEADER UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; RAMAN SPECTROSCOPY; SAPPHIRE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

BIAXIAL STRAIN; BLUESHIFT; INGAN LAYERS; RAMAN STUDY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644504169     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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