Carrier lifetime measurements using free carrier absorption transients. II. Lifetime mapping and effects of surface recombination

Journal of Applied Physics

Volumn 84, Issue 1, 1998, Pages 284-291

  Linnros, Jan ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000120918     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368025     Document Type: Article

References (33)

1. J. I. Pankove and J. E. Berkeyheiser, Rev. Sci. Instrum. 57, 674 (1986).
2. T. S. Horanyi, T. Pavelka, and P. Tuttö, Appl. Surf. Sci. 63, 306 (1993); G. Fereczi, T. Pavelka, and P. Tuttö, Jpn. J. Appl. Phys., Part 1 30, 3630 (1991).
3. T. S. Horanyi, T. Pavelka, and P. Tuttö, Appl. Surf. Sci. 63, 306 (1993); G. Fereczi, T. Pavelka, and P. Tuttö, Jpn. J. Appl. Phys., Part 1 30, 3630 (1991).
4. S. W. Glunz and W. Warta, J. Appl. Phys. 77, 3243 (1995).
5. N. Ikeda, A. Buczkowski, and F. Shimura, Appl. Phys. Lett. 63, 2914 (1993).
6. D. Guidotti, J. S. Batchelder, J. A. Van Vechten, and A. Finkel, Appl. Phys. Lett. 48, 68 (1986).
7. J. Waldmeyer, J. Appl. Phys. 63, 1977 (1988).
8. S. M. Johnson and L. G. Johnson, J. Appl. Phys. 60, 2008 (1986).
9. Z. G. Ling, P. K. Ajmera, M. Anselment, and L. F. DiMauro, Appl. Phys. Lett. 51, 1445 (1987); Z. G. Ling, P. K. Ajmera, and G. S. Kousik, J. Appl. Phys. 75, 2718 (1994).
10. Z. G. Ling, P. K. Ajmera, M. Anselment, and L. F. DiMauro, Appl. Phys. Lett. 51, 1445 (1987); Z. G. Ling, P. K. Ajmera, and G. S. Kousik, J. Appl. Phys. 75, 2718 (1994).
11. V. Grivickas, J. Linnros, A. Vigelis, J. Seckus, and J. A. Tellefsen, Solid-State Electron. 35, 299 (1992).
12. J. Linnros, R. Revsäter, L. Heijkenskjöld, and P. Norlin, IEEE Trans. Electron Devices 42, 1174 (1995).
13. J. Linnros, J. Appl. Phys. 84, 275 (1998).
14. J. Dziewior and W. Schmid, Appl. Phys. Lett. 31, 346 (1977).
15. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990), p. 359.
16. V. Grivickas, G. Thungström, V. Bikbajevas, J. Linnros, and D. Noreika, Jpn. J. Appl. Phys., Part 2 34, L806 (1995).
17. K. Katayama, Y. Kirino, K. Iba, and F. Shimura, Jpn. J. Appl. Phys., Part 2 30, L1907 (1991); L. Zhong, A. Buczkowski, K. Katayama, and F. Shimura, Appl. Phys. Lett. 61, 931 (1992).
18. K. Katayama, Y. Kirino, K. Iba, and F. Shimura, Jpn. J. Appl. Phys., Part 2 30, L1907 (1991); L. Zhong, A. Buczkowski, K. Katayama, and F. Shimura, Appl. Phys. Lett. 61, 931 (1992).
19. J. Linnros and V. Grivickas, Phys. Rev. B 50, 16 943 (1994).
20. V. Grivickas, D. Noreika, and J. A. Tellefsen, Lith. Phys. J. 29, 48 (1989) (in Russian); Sov. Phys. Collect. (USA) 29, 591 (1989).
21. V. Grivickas, D. Noreika, and J. A. Tellefsen, Lith. Phys. J. 29, 48 (1989) (in Russian); Sov. Phys. Collect. (USA) 29, 591 (1989).
22. We have found that the simple dipping does not necessarily result in a fully passivated surface and some additional treatments must precede the HF dip.
23. E. Yablonovitch and T. Gmitter, Appl. Phys. Lett. 49, 587 (1986).
24. Preliminary measurements in a HF bath using the fully optical technique showed additional complications as the excitation beam stimulated formation of porous Si close to the surface.
25. A. W. Stephens, A. G. Aberle, and M. A. Green, J. Appl. Phys. 76, 363 (1994); S. W. Glunz, A. B. Sproul, W. Warta, and W. Wettling, ibid. 75, 1611 (1994).
26. A. W. Stephens, A. G. Aberle, and M. A. Green, J. Appl. Phys. 76, 363 (1994); S. W. Glunz, A. B. Sproul, W. Warta, and W. Wettling, ibid. 75, 1611 (1994).
27. C. Leguijt, P. Lölgen, J. A. Eikelboom, P. H. Amesz, R. A. Steeman, W. C. Sinke, P. M. Sarro, L. A. Verhoef, P.-P. Michiels, Z. H. Chen, and A. Rohatgi, Sol. Energy Mater. Sol. Cells 34, 177 (1994).
28. Some preliminary experiments indicate that, for reproducible results, silicon etching of a few microns before the HF dip and the growth of the chemical oxide is necessary.
29. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
30. Any 1-dim device simulator may easily confirm this.
31. J. Linnros, P. Norlin, and A. Hallén, Tech. Dig. Int. Electron. Devices Meet. , 157 (1991); IEEE Trans. Electron Devices 40, 2065 (1993).
32. J. Linnros, P. Norlin, and A. Hallén, Tech. Dig. Int. Electron. Devices Meet. , 157 (1991); IEEE Trans. Electron Devices 40, 2065 (1993).
33. A. Galeckas, V. Grivickas, J. Linnros, and C. Hallin, J. Appl. Phys. 81, 3522 (1997).