Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence

Journal of Applied Physics

Volumn 84, Issue 1, 1998, Pages 275-283

  Linnros, Jan ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000120914     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368024     Document Type: Article

References (42)

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2. For reviews of lifetime measurement methods and references see: D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990), p. 359; J. W. Orton and P. Blood, The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Academic, San Diego, CA, 1990).
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