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Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 41-50

Radiative and nonradiative recombination processes in GaN-based semiconductors

(10) Kawakami, Y a Omae, K a Kaneta, A a Okamoto, K a Izumi, T a Saijou, S a Inoue, K a Narukawa, Y b Mukai, T b Fujita, Sg a

a KYOTO UNIVERSITY (Japan)

b NICHIA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHARGE CARRIERS; DIFFRACTION GRATINGS; ELECTROLUMINESCENCE; EXCITONS; LIGHT ABSORPTION; OPTICAL MICROSCOPY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; RADIATION; SPECTROSCOPIC ANALYSIS;

NONRADIATIVE RECOMBINATION PROCESSES; PUMP AND PROBE SPECTROSCOPY; RADIATIVE RECOMBINATION PROCESS; SCANNING NEAR FIELD OPTICAL MICROSCOPY; TIME RESOLVED ELECTROLUMINESCENCE; TIME RESOLVED PHOTOLUMINESCENCE; TRANSIENT GRATING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035122883 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200101)183:1<41::AID-PSSA41>3.0.CO;2-V Document Type: Article

Times cited : (63)

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