Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 3, 2007, Pages

  Itskos, G ^a,f   Heliotis, G ^a   Lagoudakis, P G ^b   Lupton, J ^b   Barradas, N P ^c   Alves, E ^c   Pereira, S ^d   Watson, I M ^e   Dawson, M D ^e   Feldmann, J ^b   Murray, R ^a   Bradley, D D C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF MUNICH   (Germany)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d UNIVERSITY OF AVEIRO   (Portugal)

^e UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^f UNIVERSITY OF CYPRUS   (Cyprus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34547568112     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.035344     Document Type: Article

References (31)

1. T. Förster, Z. Naturforsch. A ZENAAU 0044-3166 4, 321 (1949).
2. V. M. Agranovich, G. C. La Rocca, and F. Bassani, JETP Lett. JTPLA2 0021-3640 66, 748 (1997).
3. V. M. Agranovich, D. M. Basko, G. C. La Rocca, and F. Bassani, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/10/42/005 10, 9369 (1998).
4. G. Heliotis, P. N. Stavrinou, D. D. C. Bradley, E. Gu, C. Griffin, C. W. Jeon, and M. D. Dawson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2039991 87, 103505 (2005).
5. G. Heliotis, G. Itskos, R. Murray, M. D. Dawson, I. M. Watson, and D. D. C. Bradley, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200501949 18, 334 (2006).
6. C. J. Deatcher, C. Liu, S. Pereira, M. Lada, A. G. Cullis, Y. J. Sun, O. Brandt, and I. M. Watson, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/18/4/304 18, 212 (2003).
7. L. T. Tan, R. W. Martin, K. P. O'Donnell, and I. M. Watson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2345246 89, 101910 (2006).
8. S. Pereira, E. Pereira, E. Alves, N. P. Barradas, K. P. O'Donnell, C. Liu, C. J. Deatcher, and I. M. Watson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1513661 81, 2950 (2002).
9. N. P. Barradas, C. Jeynes, and R. P. Webb, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119524 71, 291 (1997).
10. N. P. Barradas, E. Alves, S. Pereira, V. V. Shvartsman, A. L. Kholkin, E. Pereira, K. P. O'Donnell, C. Liu, C. J. Deatcher, I. M. Watson, and M. Mayer, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/j.nimb.2003.11.009 217, 479 (2004).
11. B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370150 85, 6470 (1999).
12. S. M. Ting, J. C. Ramer, D. I. Florescu, V. N. Merai, B. E. Albert, A. Parekh, D. S. Lee, D. Lu, D. V. Christini, L. Liu, and E. A. Armour, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1586972 94, 1461 (2003).
13. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200303262 240, 297 (2003).
14. V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe (John Wiley & Sons, New York, 2001).
15. S. Janietz, D. D. C. Bradley, M. Grell, C. Giebler, M. Inbasekaran, and E. P. Woo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122479 73, 2453 (1998).
16. E. S. Jeon, V. Kozlov, Y.-K. Song, A. Vertikov, M. Kuball, A. V. Nurmikko, H. Liu, C. Chen, R. S. Kern, C. P. Kuo, and M. G. Craford, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116983 69, 4194 (1996);
17. C. K. Sun, S. Keller, T. L. Chiu, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 3, 1077 (1997).
18. S. Kos, M. Achermann, V. I. Klimov, and D. L. Smith, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.205309 71, 205309 (2005).
19. D. Basko, G. C. La Rocca, F. Bassani, and V. M. Agranovich, Eur. Phys. J. B EPJBFY 1434-6028 10.1007/s100510050700 8, 353 (1999).
20. L. M. Herz, C. Silva, A. C. Grimsdale, K. Mullen, and R. T. Phillips, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.70.165207 70, 165207 (2004).
21. R. Xia, G. Heliotis, M. Campoy-Quiles, P. N. Stavrinou, D. D. C. Bradley, Doojin Vak, and Dong-Yu Kim, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2085311 98, 083101 (2005).
22. M. Ariu, M. Sims, M. D. Rahn, J. Hill, A. M. Fox, D. G. Lidzey, M. Oda, J. Cabanillas-Gonzalez, and D. D. C. Bradley, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.195333 67, 195333 (2003);
23. O. J. Korovyanko and Z. V. Vardeny, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/S0009-2614(02)00349-4 356, 361 (2002).
24. D. M. Basko, G. C. La Rocca, F. Bassani, and V. M. Agranovich, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.165330 71, 165330 (2005);
25. D. G. Lidzey, D. D. C. Bradley, A. Armitage, S. Walker, and M. S. Skolnick, Science SCIEAS 0036-8075 10.1126/science.288.5471.1620 288, 1620 (2000).
26. J. Hill, S. Y. Heriot, O. Worsfold, T. H. Richardson, A. M. Fox, and D. D. C. Bradley, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.041303 69, 041303 (R) (2004).
27. T. Virgili, D. G. Lidzey, and D. D. C. Bradley, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/(SICI)1521-4095(200001)12:1<58::AID- ADMA58>3.0.CO;2-E 12, 58 (2000).
28. C.-K. Sun, T.-L. Chiu, S. Keller, G. Wang, M. S. Minsky, S. P. Denbaars, and J. E. Bowers, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119568 71, 425 (1997).
29. M. Achermann, M. A. Petruska, S. Kos, D. L. Smith, D. D. Koleske, and V. I. Klimov, Nature (London) NATUAS 0028-0836 10.1038/nature02571 429, 642 (2004).
30. G. Heliotis, R. Xia, D. D. C. Bradley, G. A. Turnbull, I. D. W. Samuel, P. Andrew, and W. L. Barnes, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1612903 83, 2118 (2003).
31. M. Campoy-Quiles, G. Heliotis, R. Xia, M. Ariu, M. Pintani, P. Etchegoin, and D. D. C. Bradley, Adv. Funct. Mater. AFMDC6 1616-301X 10.1002/adfm. 200400121 15, 925 (2005).