메뉴 건너뛰기




Volumn , Issue 9780817644895, 2007, Pages 151-171

Deterministic kinetic solvers for charged particle transport in semiconductor devices

Author keywords

Boltzmann transport equation (BTE); direct simulation Monte Carlo (DSMC); metal oxide semiconductor field effect transistor (MOSFET); metal semiconductor field effect transistor (MESFET); semiconductor device simulation; Weighted essentially non oscillatory (WENO) schemes

Indexed keywords


EID: 84922642986     PISSN: 21643679     EISSN: 21643725     Source Type: Book Series    
DOI: 10.1007/978-0-8176-4554-0_7     Document Type: Chapter
Times cited : (13)

References (55)
  • 1
    • 0035693642 scopus 로고    scopus 로고
    • Approximation of the BTE by a relaxation-time operator: Simulations for a 50nmchannel Si diode
    • Anile, A.M.; Carrillo, J.A.; Gamba, I.M.; Shu, C.-W.: Approximation of the BTE by a relaxation-time operator: simulations for a 50nmchannel Si diode, VLSI Design, 13, (2001), 349–354.
    • (2001) VLSI Design , vol.13 , pp. 349-354
    • Anile, A.M.1    Carrillo, J.A.2    Gamba, I.M.3    Shu, C.-W.4
  • 2
    • 0036903210 scopus 로고    scopus 로고
    • Two-population hydrodynamical models for carrier transport in gallium arsenide: Simulation of gunn oscillations
    • Anile, A.M.; Hern, S.D.: Two-population hydrodynamical models for carrier transport in gallium arsenide: simulation of gunn oscillations, VLSI Design, 15, (2002), 681–693.
    • (2002) VLSI Design , vol.15 , pp. 681-693
    • Anile, A.M.1    Hern, S.D.2
  • 3
    • 33645159547 scopus 로고    scopus 로고
    • Recent developments in hydrodynamical modeling of semiconductors, Mathematical problems in semiconductor physics
    • Anile, A.M.; Mascali, G.; Romano, V.: Recent developments in hydrodynamical modeling of semiconductors, Mathematical problems in semiconductor physics, Lecture Notes in Math., 1823, (2003), 1–56.
    • (2003) Lecture Notes in Math. , vol.1823 , pp. 1-56
    • Anile, A.M.1    Mascali, G.2    Romano, V.3
  • 4
    • 4544251364 scopus 로고    scopus 로고
    • A semicontinuous formulation of the Bloch-Boltzmann-Peierls equations
    • Auer, C.; Schürrer, F.; Koller, W.: A semicontinuous formulation of the Bloch-Boltzmann-Peierls equations, SIAM J. Appl. Math., 64, (2004), 1457–1475.
    • (2004) SIAM J. Appl. Math. , vol.64 , pp. 1457-1475
    • Auer, C.1    Schürrer, F.2    Koller, W.3
  • 5
    • 33745034942 scopus 로고    scopus 로고
    • Efficient time integration of the Boltzmann-Poisson system applied to semiconductor device simulation
    • Auer, C.; Schürrer, F.: Efficient time integration of the Boltzmann-Poisson system applied to semiconductor device simulation, J. Comput. Electron., 5, (2006), 5–14.
    • (2006) J. Comput. Electron. , vol.5 , pp. 5-14
    • Auer, C.1    Schürrer, F.2
  • 6
    • 38849173422 scopus 로고    scopus 로고
    • Numerical schemes for solving the non-stationary Boltzmann–Poisson system for two-dimensional semiconductor devices
    • Auer, C.; Majorana, A.; Schürrer, F.: Numerical schemes for solving the non-stationary Boltzmann–Poisson system for two-dimensional semiconductor devices, ESAIM: Proceedings, 15, (2005), 75–86.
    • (2005) ESAIM: Proceedings , vol.15 , pp. 75-86
    • Auer, C.1    Majorana, A.2    Schürrer, F.3
  • 8
    • 0035531199 scopus 로고    scopus 로고
    • High field approximations of the spherical harmonics expansion model for semiconductors
    • Z. Angew
    • Ben Abdallah, N.; Degond, P.; Markowich, P.; Schmeiser, C.: High field approximations of the spherical harmonics expansion model for semiconductors, Z. Angew. Math. Phys., 52, (2001), 201–230.
    • (2001) Math. Phys. , vol.52 , pp. 201-230
    • Ben Abdallah, N.1    Degond, P.2    Markowich, P.3    Schmeiser, C.4
  • 9
    • 21844450180 scopus 로고    scopus 로고
    • Monte Carlo hydrodynamic and drift-diffusions simulation of scaled double-gate MOSFETs
    • Bufler, F.M.; Schenk, A.; Fichtner, W.: Monte Carlo hydrodynamic and drift-diffusions simulation of scaled double-gate MOSFETs, J. Comput. Electron., 2, (2003), 81–84.
    • (2003) J. Comput. Electron. , vol.2 , pp. 81-84
    • Bufler, F.M.1    Schenk, A.2    Fichtner, W.3
  • 11
    • 33751202721 scopus 로고    scopus 로고
    • Deterministic simulation of the Boltzmann–Poisson system in GaAs-based semiconductors
    • Cáceres, M.J.; Carrillo, J.A.; Majorana, A.: Deterministic simulation of the Boltzmann–Poisson system in GaAs-based semiconductors, SIAM Journal of Scientific Computing, 27, (2006), 1981–2009.
    • (2006) SIAM Journal of Scientific Computing , vol.27 , pp. 1981-2009
    • Cáceres, M.J.1    Carrillo, J.A.2    Majorana, A.3
  • 12
    • 0034315478 scopus 로고    scopus 로고
    • Computational macroscopic approximations to the 1D relaxation-time kinetic system for semiconductors
    • Carrillo, J.A.; Gamba, I.M.; Shu, C.-W.: Computational macroscopic approximations to the 1D relaxation-time kinetic system for semiconductors, Physica D, 146, (2000), 289–306.
    • (2000) Physica D , vol.146 , pp. 289-306
    • Carrillo, J.A.1    Gamba, I.M.2    Shu, C.-W.3
  • 13
    • 9744245580 scopus 로고    scopus 로고
    • Comparison of Monte Carlo and deterministic simulations of a silicon diode
    • Carrillo, J.A.; Gamba, I.M.; Muscato, O.; Shu, C.-W.: Comparison of Monte Carlo and deterministic simulations of a silicon diode, IMA Volume Series 135, (2003), 75–84.
    • (2003) IMA Volume Series , vol.135 , pp. 75-84
    • Carrillo, J.A.1    Gamba, I.M.2    Muscato, O.3    Shu, C.-W.4
  • 14
    • 22544464100 scopus 로고    scopus 로고
    • A WENO-solver for the 1D non-stationary Boltzmann–Poisson system for semiconductor devices
    • Carrillo, J.A.; Gamba, I.M.; Majorana, A.; Shu, C.-W.: A WENO-solver for the 1D non-stationary Boltzmann–Poisson system for semiconductor devices, J. Comput. Electron., 1, (2002), 365–370.
    • (2002) J. Comput. Electron. , vol.1 , pp. 365-370
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 16
    • 29144517213 scopus 로고    scopus 로고
    • A direct solver for 2D non-stationary Boltzmann–Poisson systems for semiconductor devices: A MESFET simulation by WENO-Boltzmann schemes
    • Carrillo, J.A.; Gamba, I.M.; Majorana, A.; Shu, C.-W.: A direct solver for 2D non-stationary Boltzmann–Poisson systems for semiconductor devices: a MESFET simulation by WENO-Boltzmann schemes, J. Comput. Electron., 2, (2003), 375–380.
    • (2003) J. Comput. Electron. , vol.2 , pp. 375-380
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 17
    • 33644542461 scopus 로고    scopus 로고
    • 2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods
    • Carrillo, J.A.; Gamba, I.M.; Majorana, A.; Shu, C.-W.: 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods, J. Comput. Phys., 214, (2006), 55–80.
    • (2006) J. Comput. Phys. , vol.214 , pp. 55-80
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 20
    • 21844499560 scopus 로고
    • Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case, Num
    • Chen, Z.; Cockburn, B.: Analysis of a finite element method for the drift-diffusion semiconductor device equations: the multidimensional case, Num. Math., 71, (1995), 1–28.
    • (1995) Math. , vol.71 , pp. 1-28
    • Chen, Z.1    Cockburn, B.2
  • 23
    • 33644542328 scopus 로고    scopus 로고
    • Macroscopic limits of the Boltzmann equation: A review
    • Model. Simul. Sci. Eng. Technol., Birkhäuser Boston
    • Degond, P.: Macroscopic limits of the Boltzmann equation: a review, Modeling and computational methods for kinetic equations, Model. Simul. Sci. Eng. Technol., Birkhäuser Boston, (2004), 3–57.
    • (2004) Modeling and Computational Methods for Kinetic Equations , pp. 3-57
    • Degond, P.1
  • 24
    • 24944511687 scopus 로고    scopus 로고
    • Simulation of Schottky barrier diodes with a direct solver for the Boltzmann-Poisson system
    • Domaingo, A.; Schürrer, F.: Simulation of Schottky barrier diodes with a direct solver for the Boltzmann-Poisson system, J. Comput. Electron., 3, (2004), 221–225.
    • (2004) J. Comput. Electron. , vol.3 , pp. 221-225
    • Domaingo, A.1    Schürrer, F.2
  • 25
    • 25444485716 scopus 로고    scopus 로고
    • A combined multicell-WENO solver for the Boltzmann–Poisson system of 1D semiconductor devices
    • Domaingo, A.; Galler, M.; Schürrer, F.: A combined multicell-WENO solver for the Boltzmann–Poisson system of 1D semiconductor devices, Compel, 24, (2005), 1311–1327.
    • (2005) Compel , vol.24 , pp. 1311-1327
    • Domaingo, A.1    Galler, M.2    Schürrer, F.3
  • 26
    • 33745026899 scopus 로고    scopus 로고
    • A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface
    • Ertler, C.; Schürrer, F.: A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface, J. Comput. Electron., 5, (2006), 15–26.
    • (2006) J. Comput. Electron. , vol.5 , pp. 15-26
    • Ertler, C.1    Schürrer, F.2
  • 27
    • 0001727886 scopus 로고
    • Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
    • Fatemi, E.; Odeh, F.: Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices, J. Comput. Phys., 108, (1993), 209–217.
    • (1993) J. Comput. Phys. , vol.108 , pp. 209-217
    • Fatemi, E.1    Odeh, F.2
  • 28
    • 0004254423 scopus 로고
    • Maxwell Macmillan, New York
    • Ferry, D.K.: Semiconductors, Maxwell Macmillan, New York, 1991.
    • (1991) Semiconductors
    • Ferry, D.K.1
  • 29
    • 1142301540 scopus 로고    scopus 로고
    • A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
    • Galler, M.; Schürrer, F.: A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors, J. Phys. A, 37, (2004), 1479–1497.
    • (2004) J. Phys. A , vol.37 , pp. 1479-1497
    • Galler, M.1    Schürrer, F.2
  • 30
    • 31444446428 scopus 로고    scopus 로고
    • A deterministic solver for the 1D nonstationary Boltzmann–Poisson system for GaAs devices: Bulk GaAs and GaAs n+/ni/n+ diode
    • Galler, M.; Schürrer, F.: A deterministic solver for the 1D nonstationary Boltzmann–Poisson system for GaAs devices: bulk GaAs and GaAs n+/ni/n+ diode, J. Comput. Electron., 4, (2005), 261–273.
    • (2005) J. Comput. Electron. , vol.4 , pp. 261-273
    • Galler, M.1    Schürrer, F.2
  • 31
    • 23844509994 scopus 로고    scopus 로고
    • A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects
    • Galler, M.; Schürrer, F.: A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects, J. Comput. Phys., 210, (2005), 519–534.
    • (2005) J. Comput. Phys. , vol.210 , pp. 519-534
    • Galler, M.1    Schürrer, F.2
  • 32
    • 34248666029 scopus 로고    scopus 로고
    • Multigroup equations for the description of the particle transport in semiconductors
    • World Scientific Publishing, Singapore
    • Galler, M.: Multigroup equations for the description of the particle transport in semiconductors, Series on Advances in Mathematics for Applied Sciences 70, World Scientific Publishing, Singapore, 2005.
    • (2005) Series on Advances in Mathematics for Applied Sciences , vol.70
    • Galler, M.1
  • 33
    • 85026633368 scopus 로고    scopus 로고
    • Deterministic and stochastic simulations of electron transport in semiconductors, to appear in Transport Theory and Stat
    • Galler, M.; Majorana, A.: Deterministic and stochastic simulations of electron transport in semiconductors, to appear in Transport Theory and Stat. Phys.
    • Phys
    • Galler, M.1    Majorana, A.2
  • 34
    • 29144494973 scopus 로고    scopus 로고
    • A direct multigroup-WENO solver for the 2D non-stationary Boltzmann–Poisson system for GaAs devices: GaAs- MESFET
    • Galler, M.; Schürrer, F.: A direct multigroup-WENO solver for the 2D non-stationary Boltzmann–Poisson system for GaAs devices: GaAs- MESFET, J. Comput. Phys., 212, (2006), 778–797.
    • (2006) J. Comput. Phys. , vol.212 , pp. 778-797
    • Galler, M.1    Schürrer, F.2
  • 35
    • 33644558948 scopus 로고
    • Behavior of the potential at the pn-Junction for a model in semiconductor theory
    • Gamba, I.M: Behavior of the potential at the pn-Junction for a model in semiconductor theory, Appl. Math. Lett., 3, (1990), 59–63.
    • (1990) Appl. Math. Lett. , vol.3 , pp. 59-63
    • Gamba, I.M.1
  • 36
    • 0027595154 scopus 로고
    • Asymptotic boundary conditions for an oxide region in a semiconductor device
    • Gamba, I.M: Asymptotic boundary conditions for an oxide region in a semiconductor device, Asymptotic Anal., 7, (1993), 37–48.
    • (1993) Asymptotic Anal. , vol.7 , pp. 37-48
    • Gamba, I.M.1
  • 37
    • 33644504758 scopus 로고
    • Asymptotic behavior at the boundary of a semiconductor device in two space dimensions
    • IV), CLXIII
    • Gamba, I.M: Asymptotic behavior at the boundary of a semiconductor device in two space dimensions, Ann. Mat. Pura App. (IV), CLXIII, (1993), 43–91.
    • (1993) Ann. Mat. Pura App , pp. 43-91
    • Gamba, I.M.1
  • 38
    • 85026626818 scopus 로고    scopus 로고
    • Local discontinuous Galerkin schemes to linear Boltzmann equations
    • preprint
    • Gamba, I.M; Proft, J.: Local discontinuous Galerkin schemes to linear Boltzmann equations. Analysis and simulations, preprint.
    • Analysis and Simulations
    • Gamba, I.M.1    Proft, J.2
  • 41
  • 43
    • 0030161771 scopus 로고    scopus 로고
    • Efficient implementation of weighted ENO schemes
    • Jiang, G.; Shu, C.-W.: Efficient implementation of weighted ENO schemes, J. Comput. Phys., 126, (1996), 202–228.
    • (1996) J. Comput. Phys. , vol.126 , pp. 202-228
    • Jiang, G.1    Shu, C.-W.2
  • 46
    • 1942488371 scopus 로고    scopus 로고
    • Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann–Poisson solver
    • Majorana, A.; Milazzo, C.; Muscato, O.: Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann–Poisson solver, COMPEL, 23, (2004), 410–425.
    • (2004) COMPEL , vol.23 , pp. 410-425
    • Majorana, A.1    Milazzo, C.2    Muscato, O.3
  • 47
    • 0035842863 scopus 로고    scopus 로고
    • A finite difference scheme solving the Boltzmann–Poisson system for semiconductor devices
    • Majorana, A.; Pidatella, R.M.: A finite difference scheme solving the Boltzmann–Poisson system for semiconductor devices, J. Comput. Phys., 174, (2001), 649–668.
    • (2001) J. Comput. Phys. , vol.174 , pp. 649-668
    • Majorana, A.1    Pidatella, R.M.2
  • 49
    • 18144366409 scopus 로고    scopus 로고
    • Simulation of Gunn oscillations with a nonparabolic hydrodynamical model based on the maximum entropy principle
    • Mascali, G.; Romano, V.: Simulation of Gunn oscillations with a nonparabolic hydrodynamical model based on the maximum entropy principle, Compel, 24, (2005), 35–54.
    • (2005) Compel , vol.24 , pp. 35-54
    • Mascali, G.1    Romano, V.2
  • 51
    • 0034449740 scopus 로고    scopus 로고
    • Space-time discretization of series expansion methods for the Boltzmann transport equation
    • Ringhofer, C.: Space-time discretization of series expansion methods for the Boltzmann transport equation, SIAM J. Numer. Anal., 38, (2000), 442–465.
    • (2000) SIAM J. Numer. Anal. , vol.38 , pp. 442-465
    • Ringhofer, C.1
  • 52
    • 1842563943 scopus 로고    scopus 로고
    • A mixed spectral-difference method for the steady state Boltzmann–Poisson system
    • Ringhofer, C.: A mixed spectral-difference method for the steady state Boltzmann–Poisson system, SIAM J. Numerical Analysis 41, (2003), 64–89.
    • (2003) SIAM J. Numerical Analysis , vol.41 , pp. 64-89
    • Ringhofer, C.1
  • 54
    • 0000034725 scopus 로고    scopus 로고
    • Essentially non-oscillatory and weighted essentially nonoscillatory schemes for hyperbolic conservation laws
    • Shu, C.-W.: Essentially non-oscillatory and weighted essentially nonoscillatory schemes for hyperbolic conservation laws, Lecture Notes in Mathematics 1697, (1998), 325–432.
    • (1998) Lecture Notes in Mathematics , vol.1697 , pp. 325-432
    • Shu, C.-W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.