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Volumn 23, Issue 2, 2004, Pages 410-425

Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann-Poisson solver

Author keywords

Electronic engineering; Monte Carlo simulation; Semiconductor devices; Silicon

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRONICS ENGINEERING; FINITE DIFFERENCE METHOD; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHONONS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; THERMODYNAMIC STABILITY;

EID: 1942488371     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/03321640410510578     Document Type: Article
Times cited : (29)

References (7)
  • 2
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    • Fatemi, C. and Odeh, F. (1993), "Upwind finite difference solution of the Boltzmann equation applied to eletron transport in semiconductor devices", J. Comp. Phys., Vol. 108, pp. 209-17.
    • (1993) J. Comp. Phys. , vol.108 , pp. 209-217
    • Fatemi, C.1    Odeh, F.2
  • 3
    • 0026116329 scopus 로고
    • Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures - Part I: Homogeneous transport
    • Fischetti, M.V. (1991), "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures - part I: homogeneous transport", IEEE Trans. Elec. Dev., Vol. 38 No. 3, pp. 634-49.
    • (1991) IEEE Trans. Elec. Dev. , vol.38 , Issue.3 , pp. 634-649
    • Fischetti, M.V.1
  • 4
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • Jacoboni, C. and Reggiani, L. (1983), "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials", Rev. Modern Phys., Vol. 55 No. 3, pp. 645-705.
    • (1983) Rev. Modern Phys. , vol.55 , Issue.3 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 5
    • 0025457187 scopus 로고
    • Monte Carlo analysis of semiconductor devices: The DAMOCLES program
    • Laux, S.E., Fischetti, M.V. and Frank, D.J. (1990), "Monte Carlo analysis of semiconductor devices: the DAMOCLES program", IBM J. Res. Develop., Vol. 34, No. 4, pp. 466-94.
    • (1990) IBM J. Res. Develop. , vol.34 , Issue.4 , pp. 466-494
    • Laux, S.E.1    Fischetti, M.V.2    Frank, D.J.3
  • 6
    • 0035842863 scopus 로고    scopus 로고
    • A finite difference scheme solving the Boltzmann Poisson system for semiconductor devices
    • Majorana, A. and Pidatella, R.M. (2001), "A finite difference scheme solving the Boltzmann Poisson system for semiconductor devices", J. Comp. Phys., Vol. 174 No. 2, pp. 649-68.
    • (2001) J. Comp. Phys. , vol.174 , Issue.2 , pp. 649-668
    • Majorana, A.1    Pidatella, R.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.