|
Volumn 23, Issue 2, 2004, Pages 410-425
|
Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann-Poisson solver
a a a |
Author keywords
Electronic engineering; Monte Carlo simulation; Semiconductor devices; Silicon
|
Indexed keywords
COMPUTER SIMULATION;
ELECTRON SCATTERING;
ELECTRONICS ENGINEERING;
FINITE DIFFERENCE METHOD;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
PHONONS;
POISSON EQUATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
THERMODYNAMIC STABILITY;
BOLTZMANN-POISSON SOLVER;
CHARGE TRANSPORT;
SILICON DIODE;
THERMAL EQUILIBRIUM;
CHARGE TRANSFER DEVICES;
|
EID: 1942488371
PISSN: 03321649
EISSN: None
Source Type: Journal
DOI: 10.1108/03321640410510578 Document Type: Article |
Times cited : (29)
|
References (7)
|