Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

Computer Methods in Applied Mechanics and Engineering

Volumn 181, Issue 4, 2000, Pages 381-392

  Cercignani, Carlo ^a   Gamba, Irene M ^b   Jerome, Joseph W ^c   Shu, Chi Wang ^d  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d BROWN UNIVERSITY   (United States)

Author keywords

Augmented drift diffusion; Domain decomposition; High field model; Hydrodynamic model; Kinetic model

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; HYDRODYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

AUGMENTED DRIFT-DIFFUSION; DOMAIN DECOMPOSITION; GLOBAL KINETIC MODEL;

SEMICONDUCTOR DIODES;

EID: 0033640331     PISSN: 00457825     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0045-7825(99)00186-3     Document Type: Article

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