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Volumn 2, Issue 2-4, 2003, Pages 375-380

A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes

Author keywords

Boltzmann Poisson system for semiconductors; spherical coordinate system; WENO scheme

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MESFET DEVICES; POISSON EQUATION; SPHERES; VECTOR SPACES;

EID: 29144517213     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011455.74817.35     Document Type: Article
Times cited : (37)

References (7)
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    • (2002) Journal of Computational Electronics , vol.1 , pp. 365
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 2
    • 0037455598 scopus 로고    scopus 로고
    • A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices. Performance and comparisons with Monte Carlo methods
    • J.A. Carrillo, I.M. Gamba, A. Majorana, and C.-W. Shu, “A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices. Performance and comparisons with Monte Carlo methods, ” Journal of Computational Physics, 184, 498 (2003).
    • (2003) Journal of Computational Physics , vol.184 , pp. 498
    • Carrillo, J.A.1    Gamba, I.M.2    Majorana, A.3    Shu, C.-W.4
  • 3
    • 0030161771 scopus 로고    scopus 로고
    • Efficient implementation of weighted ENO schemes
    • G. Jiang and C.-W. Shu, “Efficient implementation of weighted ENO schemes, ” Journal of Computational Physics, 126, 202 (1996).
    • (1996) Journal of Computational Physics , vol.126 , pp. 202
    • Jiang, G.1    Shu, C.-W.2
  • 4
    • 0035842863 scopus 로고    scopus 로고
    • A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
    • A. Majorana and R.M. Pidatella, “A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices, ” Journal of Computational Physics, 174, 649 (2001).
    • (2001) Journal of Computational Physics , vol.174 , pp. 649
    • Majorana, A.1    Pidatella, R.M.2
  • 5
    • 0000057046 scopus 로고
    • Energy models for one-carrier transport in semiconductor devices
    • edited byW. Coughran, J. Cole, P. Lloyd, and J. White, Springer-Verlag
    • J. Jerome and C.-W. Shu, “Energy models for one-carrier transport in semiconductor devices, ” in IMA Volumes in Mathematics and Its Applications, edited byW. Coughran, J. Cole, P. Lloyd, and J. White (Springer-Verlag, 1994), vol. 59, p. 185.
    • (1994) IMA Volumes in Mathematics and Its Applications , vol.59 , pp. 185
    • Jerome, J.1    Shu, C.-W.2
  • 7
    • 0001727886 scopus 로고
    • Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
    • E. Fatemi and F. Odeh, “Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices, ” Journal of Computational Physics, 108, 209 (1993).
    • (1993) Journal of Computational Physics , vol.108 , pp. 209
    • Fatemi, E.1    Odeh, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.