Deterministic simulation of the Boltzmann-Poisson system in GaAs-based semiconductors

SIAM Journal on Scientific Computing

Volumn 27, Issue 6, 2006, Pages 1981-2009

  Cáceres, María J ^a   Carrillo, José A ^b   Majorana, Armando ^c  

^a UNIVERSITY OF GRANADA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

Deterministic scheme; GaAs device; Gunn oscillations; Semiconductor simulation; WENO methods

Indexed keywords

BAND STRUCTURE; GUNN OSCILLATORS; LIGHT SCATTERING; MONTE CARLO METHODS; POISSON EQUATION;

BOLTZMANN-POISSON SYSTEMS; KINETIC EQUATIONS; MIDDLE-POINT INTEGRATION RULE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33751202721     PISSN: 10648275     EISSN: None     Source Type: Journal    
DOI: 10.1137/040607526     Document Type: Article

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