A WENO-Solver for the 1D Non-Stationary Boltzmann–Poisson System for Semiconductor Devices

Journal of Computational Electronics

Volumn 1, Issue 3, 2002, Pages 365-370

  Carrillo, José A ^a   Gamba, Irene M ^b   Majorana, Armando ^c   Shu, Chi Wang ^d  

^a UNIVERSITY OF GRANADA   (Spain)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c UNIVERSITY OF CATANIA   (Italy)

^d BROWN UNIVERSITY   (United States)

Author keywords

Boltzmann equation for semiconductors; spherical coordinate system; WENO scheme

Indexed keywords

BOLTZMANN EQUATION; ELECTRON TRANSPORT PROPERTIES; PHASE VELOCITY; SPHERES;

ELECTRON TRANSPORT; HIGH-ORDER WENO SCHEMES; NONSTATIONARY; POISSON SYSTEM; SPHERICAL COORDINATE SYSTEMS; STEADY STATE; TIME VARIABLE; WENO SCHEMES;

SEMICONDUCTOR DEVICES;

EID: 22544464100     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020751624960     Document Type: Article

References (4)

1. Fatemi E. and Odeh F. 1993. Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor device. J. Comput. Phys. 108: 209–217.
2. Jiang G. and Shu C.-W. 1996. Efficient implementation of weighted ENO schemes. J. Comput. Phys. 126: 202–228.
3. Majorana A. and Pidatella R.M. 2001. A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices. J. Comput. Phys. 174: 649–668.
4. Shu C.-W. 1998. Essentially non-oscillatory and weighted essentially non-oscillatory schemes for hyperbolic conservation laws. In: Cockburn B., Johnson C., Shu C.-W., Tadmor E., and Quarteroni A. (Eds.), Advanced Numerical Approximation of Nonlinear Hyperbolic Equations. Lecture Notes in Mathematics Vol. 1697, Springer, pp. 325–432.