A deterministic study of hot phonon effects in a 2D electron gas channel formed at an AlGaN/GaN heterointerface

Journal of Computational Electronics

Volumn 5, Issue 1, 2006, Pages 15-26

  Ertler, Christian ^a   Schürrer, Ferdinand ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

AlGaN GaN heterostructure; Boltzmann transport equation; Hot phonons; Two dimensional electron gas

Indexed keywords

ELECTRON GAS; ELECTRON MOBILITY; HETEROJUNCTIONS; NUMERICAL METHODS; PHONONS; POISSON DISTRIBUTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; TWO DIMENSIONAL;

ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE HETEROINTERFACE; BOLTZMANN TRANSPORT EQUATIONS; ELECTRON GAS CHANNEL; HOT PHONON EFFECTS;

COMPUTER AIDED NETWORK ANALYSIS;

EID: 33745026899     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-7915-5     Document Type: Article

References (27)

1. H. Morkoç, 1999 Nitride Semiconductors and Devices Springer Heidelberg
2. V. Kumar et al. "High performance 0.25 small μ gate-length AlGaN/ GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz", Solid Stat. Electr., 47, 1577 (2003). 10.1016/S0038-1101(03)00078-9
3. K. K. Ju etal "9.4-W/mm power density AlGaN-GaN HEMTs on free standing GaN", Elect. Dev. Lett., 25, 596 (2004). 10.1109/LED.2004.833847
4. O. Ambacher etal "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys., 85, 3222 (1999). 10.1063/1.369664
5. O. Ambacher etal "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/ GaN heterostructures", J. Appl. Phys., 87, 334 (2000). 10.1063/1.371866
6. J. M. Barker etal "High field transport in GaN/AlGaN heterostructures", J. Vac. Sci. Tech. B, 22, 2045 (2004). 10.1116/1.1775199
7. K. T. Tsen and D. K. Ferry, "Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN", Appl. Phys. Lett., 71, 1852 (1997). 10.1063/1.119420
8. K. T. Tsen, R. P. Joshi, and D. K. Ferry, "Subpicosecond time-resolved Raman studies of non-equilibrium excitations in wide bandgap GaN", Phys. Stat. Solidi B, 204, 106 (1997). 10.1002/1521-3951(199711)204:1<106::AID-PSSB106>3.0.CO;2-E
9. 1-x N/GaN channel estimated from noise analysis", Phys. Rev. B, 68, 35338 (2003). 10.1103/PhysRevB.68.035338
10. M. Galler and F. Schürrer, "A deterministic solution approach for the coupled system of transport equations for the electrons and phonons in polar semiconductors", J. Phys. A: Math. Gen., 37, 1479 (2003). 10.1088/0305-4470/37/5/002
11. M. Galler and F. Schürer, "A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot phonon and degeneracy effects", J. Comp. Phys., 210, 519 (2005). 10.1016/j.jcp.2005.04.021
12. M. Ramonas, A. Matulionis, and L. Rota, "Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel", Semi. Sci. Tech., 18, 118 (2003). 10.1088/0268-1242/18/2/310
13. J. Kolnik et al.. "Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone bandstructure", J. Appl. Phys., 78, 1033 (1995). 10.1063/1.360405
14. D. K. Ferry S. M. Goodnick 1997 Transport in Nanostructures Cambridge University Press Cambridge
15. A. R. Hutson, "Piezoelectric scattering and phonon drag in ZnO and CdS", J. Appl. Phys., 32, 2287 (1961). 10.1063/1.1777061
16. 1-x N/GaN heterostructures", Phys. Rev. B, 61, 16862 (2000). 10.1103/PhysRevB.61.16862
17. 1-x As/ GaAs quantum wells", Phys. Rev. B, 38, 10135 (1988). 10.1103/PhysRevB.38.10135
18. P. J. Price, "Two-dimensional transport in semiconductor layers. I: phonon scattering", Ann. Phys. (N.Y.), 133, 217 (1981). 10.1016/0003-4916(81)90250-5
19. R. J. LeVeque 1992 Numerical Methods for Conservation Laws Birkhäuser Basel
20. C.-W. Shu and S. Osher, "Efficient implementation of essentially non-oscillatory shock capturing schemes", J. Comp. Phys., 77, 439 (1988). 89g:65113
21. I.-H. Tan etal "A self-consistent solution of Schrödinger Poisson equations using a nonuniform mesh", J. Appl. Phys., 68, 4071 (1990). 10.1063/1.346245
22. M. Ramonas et al., "Hot phonon effect on power dissipation in a biased AlGaN/AlN/GaN channel", Phys. Rev. B, 71, 75324 (2005). 10.1103/PhysRevB.71.075324
23. R. Gaska etal "Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates", Appl. Phys. Lett., 72, 707 (1998). 10.1063/1.120852
24. S. K. O'Leary etal "Electron transport in wurtzite indium nitride", J. Appl. Phys., 83, 826 (1998). 10.1063/1.366641
25. L. Ardaravičius etal "Electron drift velocity in AlGaN/GaN channel at high electric fields", Appl. Phys. Lett., 83, 4038 (2003). 10.1063/1.1626258
26. M. Artaki and P. J. Price, "Hot phonon effects in silicon field-effect transistors", J. Appl. Phys., 65, 1317 (1989). 10.1063/1.343027
27. T.-H. Yu and F. Brennan, "Monte Carlo calculation of two-dimensional electron dynamics in GaN-AlGaN heterostructures", J. Appl. Phys., 91, 3730 (2002). 10.1063/1.1448889