Approximation of the BTE by a relaxation-time operator: Simulations for a 50 nm-channel Si diode

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 349-354

  Taichenachev, A V ^a   Tumaikin, A M ^a   Yudin, V I ^a   Nienhuis, G ^b  

^a NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^b LEIDEN UNIVERSITY   (Netherlands)

Author keywords

DSMC simulation; Full BTE; Quasi ballistic and ballistic regime; Relaxation time; WENO deterministic methods

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; RELAXATION PROCESSES; SEMICONDUCTING SILICON;

QUASI-BALLISTIC REGIMES;

SEMICONDUCTOR DIODES;

EID: 0035693642     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/35094     Document Type: Article

References (7)

1. Simulating quasi-ballistic transport in Si nanotransistors
2. Computational macroscopic approximations to the I-D relaxation-time kinetic system for semiconductors
3. A drift-collision balance asymptotic to a Boltzmann-Poisson system in bounded domains
4. Efficient implementation of weighted ENO schemes
5. Efficient implementation of essentially non-oscillatory shock capturing schemes II