A combined multicell-WENO solver for the Boltzmann-Poisson system of 1D semiconductor devices

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

Volumn 24, Issue 4, 2005, Pages 1311-1327

  Domaingo, A ^a   Galler, M ^a   Schurrer F ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Semiconductor devices; Silicon; Simulation

Indexed keywords

BOUNDARY CONDITIONS; FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; MATHEMATICAL OPERATORS; POLYNOMIALS;

DIFFERENTIAL OPERATORS; DIRECT SOLUTION; ONE-DIMENIONAL SEMICONDUCTOR DEVICES;

SEMICONDUCTOR MATERIALS;

EID: 25444485716     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/03321640510615634     Document Type: Article

References (13)

1. Ashcroft, N.W. and Mermin, N.D. (1976), Solid State Physics, Saunders, Orlando, FL.
2. Carrillo, J.A., Gamba, I.M., Majorana, A. and Shu, C-W. (2003), "A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: performance and comparisons with Monte Carlo methods", Journal of Computational Physics, Vol. 184 No. 2, pp. 498-525.
3. Degond, P. and Mustieles, F.J. (1991), "A deterministic particle method for the kinetic model of semiconductors: the homogeneous field model", Solid State Electronics, Vol. 34 No. 12, pp. 1335-45.
4. Ertler, C. and Schürrer, F. (2003), "A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon", Journal of Physics A: Mathematical and General, Vol. 36 No. 33, pp. 8759-74.
5. Fatemi, E. and Odeh, F. (1993), "Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices", Journal of Computational Physics, Vol. 108, pp. 209-17.
6. Galler, M. and Schürrer, F. (2004), "A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors", Journal of Physics A: Mathematical and General, Vol. 37 No. 5, pp. 1479-97.
7. Jacoboni, C. and Lugli, P. (1989), Monte Carlo Method for Semiconductor Device Simulation, Springer, New York, NY.
8. Jiang, G-S. and Shu, C-W. (1996), "Efficient implementation of weighted ENO schemes", Journal of Computational Physics, Vol. 126 No. 1, pp. 202-28.
9. Jungemann, C. and Meinerzhagen, B. (2003), Hierarchical Device Simulation- The Monte-Carlo Perspective, Springer, Wien.
10. Lapidus, L. and Pinder, G.F. (1982), Numerical Solution of Partial Differential Equations in Science and Engineering, Wiley, New York, NY.
11. Majorana, A., Muscato, O. and Milazzo, C. (2004), "Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann-Poisson solver", COMPEL, Vol. 23 No. 2, pp. 410-25.
12. Meister, A. and Struckmeier, J. (Eds) (2002), Hyperbolic Partial Differential Equations, Vieweg, Braunschweig/Wiesbaden.
13. Shu, C-W. and Osher, S. (1988), "Efficient implementation of essentially non-oscillatory shock-capturing schemes", Journal of Computational Physics, Vol. 77, pp. 439-71.