A direct multigroup-WENO solver for the 2D non-stationary Boltzmann-Poisson system for GaAs devices: GaAs-MESFET

Journal of Computational Physics

Volumn 212, Issue 2, 2006, Pages 778-797

  Galler, M ^a   Schurrer F ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Boltzmann Poisson system; GaAs MESFET; Multigroup approach; Semiconductor device simulation; WENO scheme

Indexed keywords

DISTRIBUTION FUNCTIONS; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; III-V SEMICONDUCTORS; INTELLIGENT SYSTEMS; MESFET DEVICES; MONTE CARLO METHODS; POISSON DISTRIBUTION; POISSON EQUATION; SEMICONDUCTING GALLIUM;

BOLTZMANN-POISSON SYSTEM; DIRECT SOLVERS; ELECTRON DISTRIBUTION FUNCTION; ELECTRON TRANSPORT; GAAS MESFET; MULTI-GROUP; MULTIGROUP APPROACH; NONSTATIONARY; SEMICONDUCTOR DEVICE SIMULATION; WENO SCHEMES;

GALLIUM ARSENIDE;

EID: 29144494973     PISSN: 00219991     EISSN: 10902716     Source Type: Journal    
DOI: 10.1016/j.jcp.2005.08.003     Document Type: Article

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