A finite difference scheme solving the Boltzmann-poisson system for semiconductor devices

Journal of Computational Physics

Volumn 174, Issue 2, 2001, Pages 649-668

  Majorana, A ^a   Pidatella, R M ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Boltzmann equation; Difference schemes; Semiconductors

Indexed keywords

DISTRIBUTION FUNCTIONS; ELECTRIC FIELDS; FINITE DIFFERENCE METHOD; POISSON EQUATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

BOLTZMANN'S EQUATIONS; BOLTZMANN-POISSON SYSTEM; COLLISION OPERATORS; DIFFERENCE SCHEMES; ELECTRON FLOW; FINITE DIFFERENCE SCHEME; FREE ELECTRON; OPERATOR MODEL; SCATTERING PROCESS; SCHEME SOLVING;

BOLTZMANN EQUATION;

EID: 0035842863     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcph.2001.6929     Document Type: Article

References (10)

1. Assessment of a high resolution centered scheme for the solution of hydrodynamical semiconductor equations
2. Extended hydrodynamical model of carrier transport in semiconductors
3. The Boltzmann Equation and Its Application
4. Monte Carlo analysis of electron transport in small semiconductor devices Inc.luding band-structure and space-charge effects
5. Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
6. The Monte Carlo Method for Semiconductor Device Simulation
7. A boundary value problem for a kinetic model describing electron flow in a semiconductor
8. Space homogeneous solutions to the Cauchy problem for semiconductor Boltzmann equations
9. Semiconductor Equations
10. Numerical Simulation of Submicron Semiconductor Devices