Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 81-84

  Bufler, F M ^a   Schenk, A ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

ballistic transport; double gate MOSFETs; Monte Carlo device simulation

Indexed keywords

BALLISTICS; ELECTRIC FIELDS; HYDRODYNAMICS; MONTE CARLO METHODS; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

BALLISTIC TRANSPORTS; CURRENT CONSERVATION; DIFFERENT TRANSPORT MODELS; DOUBLE-GATE MOSFETS; DRIFT-DIFFUSION SIMULATION; MONTE CARLO DEVICE SIMULATIONS; NON EQUILIBRIUM; PERFORMANCE ENHANCEMENTS;

MOSFET DEVICES;

EID: 21844450180     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011403.57401.55     Document Type: Article

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