Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition

ACS Nano

Volumn 9, Issue 1, 2015, Pages 164-171

  Wei, Dacheng ^a,b   Peng, Lan ^a   Li, Menglin ^a   Mao, Hongying ^b   Niu, Tianchao ^b   Han, Cheng ^b   Chen, Wei ^b   Wee, Andrew Thye Shen ^b  

^a FUDAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

chemical vapor deposition; doping; graphene; nanomaterials; scanning probe microscopy

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; BORON NITRIDE; CARBON FILMS; CATALYSTS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); LOADING; MICA; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; NITROGEN; NITROGEN PLASMA; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING PROBE MICROSCOPY; SEMICONDUCTOR DOPING; SILICATE MINERALS; TEMPERATURE;

CRITICAL FACTORS; CRITICAL GROWTH; DIELECTRIC SURFACE; ELECTRONIC CHARACTERISTICS; GRAPHENE GROWTH; LOW TEMPERATURES; NITROGEN DOPED GRAPHENE; NITROGEN-DOPING;

GRAPHENE;

EID: 84921816456     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn505214f     Document Type: Article

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