Effects of ammonia/methane mixtures on characteristics of plasma enhanced chemical vapor deposition n-type carbon films

Journal of the Electrochemical Society

Volumn 159, Issue 2, 2012, Pages

  Hsueh, Hsiang Chun ^a   Li, Huei Cheng ^b   Chiang, Donyau ^c   Lee, Sanboh ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS HYDROGENATED CARBON; CARBON FRACTION; ELECTRICAL PROPERTY; NITROGEN-CARBON; NITROGEN-DOPED; P-TYPE SILICON; PHOTO-ELECTRONIC DEVICES;

AMORPHOUS CARBON; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HYDROGEN BONDS; MECHANICAL PROPERTIES; NITROGEN; NITROGEN PLASMA; OPTICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RESIDUAL STRESSES; SILICON;

CARBON FILMS;

EID: 84855315721     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.051202jes     Document Type: Article

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