Nitrogen-doped graphene by microwave plasma chemical vapor deposition

Thin Solid Films

Volumn 528, Issue , 2013, Pages 269-273

  Kumar, A ^a   Voevodin, A A ^a,b   Paul, R ^a   Altfeder, I ^b   Zemlyanov, D ^a   Zakharov, D N ^a   Fisher, T S ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Graphene; Nitrogen doping; Rapid synthesis

Indexed keywords

CARBON ATOMS; CHEMICAL CHARACTERISTIC; COPPER SURFACE; CU FOIL; FEW-LAYER GRAPHENE; GROWTH PROCESS; LARGE SCALE SYNTHESIS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITIONS; NITROGEN CONCENTRATIONS; NITROGEN GAS; NITROGEN-DOPED; NITROGEN-DOPING; RAPID SYNTHESIS; SUBSTRATE HEATING;

CARBON FILMS; CHEMICAL VAPOR DEPOSITION; COPPER; METAL CLADDING; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 84872936746     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.142     Document Type: Conference Paper

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