Field effect transistors with current saturation and voltage gain in ultrathin ReS2

ACS Nano

Volumn 9, Issue 1, 2015, Pages 363-370

  Corbet, Chris M ^a   McClellan, Connor ^a   Rai, Amritesh ^a   Sonde, Sushant Sudam ^a   Tutuc, Emanuel ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

gain; mobility; rhenium disulfide; saturation; TMD; transistor

Indexed keywords

AMPLIFICATION; CARRIER MOBILITY; GAIN MEASUREMENT; SATURATION (MATERIALS COMPOSITION); SCHOTTKY BARRIER DIODES; TRANSISTORS;

BACK-GATE VOLTAGES; CURRENT SATURATION; DEVICE CHARACTERISTICS; EXPONENTIAL DEPENDENCE; FIELD EFFECT TRANSISTOR (FETS); GAIN; TMD; TRANSFER LENGTH METHODS;

FIELD EFFECT TRANSISTORS;

EID: 84921767135     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn505354a     Document Type: Article

References (36)

1. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191
2. Wang, Q. H.; Kalantar-zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
3. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
4. Chhowalla, M.; Shin, H.; Eda, G.; Li, L. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275
5. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
6. The International Technology Roadmap for Semiconductors. http://www.itrs.net/Links/2013ITRS/Summary2013.html. (accessed Aug 11, 2014).
7. 2 Phys. Rev. B 2011, 83, 245213
8. 2 Nano Lett. 2010, 10, 1271-1275
9. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
10. 2 Due to Electronic and Vibrational Decoupling Nat. Commun. 2014, 5, 1-6
11. 2 Nano Lett. 2012, 12, 5576-5580
12. 2 Nano Lett. 2013, 13, 5627-5634
13. 2 Nanosheet Photodetectors Sci. Rep. 2014, 4, 5442
14. Yang, S.; Li, Y.; Wang, X.; Huo, N.; Xia, J.-B.; Li, S.-S.; Li, J. High Performance Few-Layer GaS Photodetector and Its Unique Photo-response in Different Gas Environments Nanoscale 2014, 6, 2582-2587
15. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
16. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
17. Horzum, S.; Cakir, D.; Suh, J.; Tongay, S.; Huang, Y. S.; Ho, C. H.; Wu, J.; Sahin, H.; Peeters, F. M. Formation and Stability of Point Defects in Monolayer Rhenium Disulfide Phys. Rev. B 2014, 89, 1-7
18. Ugeda, M. M.; Bradley, A. J.; Shi, S.-F.; da Jornada, F. H.; Zhang, Y.; Qiu, D. Y.; Ruan, W.; Mo, S.-K.; Hussain, Z.; Shen, Z.-X. et al. Giant Bandgap Renormalization and Excitonic Effects in a Monolayer Transition Metal Dichalcogenide Semiconductor Nat. Mater. 2014, 13, 1091-1095
19. 2 Layered Semiconductors Phys. Rev. B 1998, 58, 130-135
20. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105
21. Streetman, B.; Banerjee, S. Solid State Electronic Devices, 6 th ed.; Prentice Hall: Upper Saddle River, NJ, 2005.
22. 2 Layers Appl. Phys. Lett. 2012, 223104, 1-4
23. Corbet, C. M.; McClellan, C.; Kim, K.; Sonde, S.; Tutuc, E.; Banerjee, S. K. Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms ACS Nano 2014, 8, 10480-10485
24. Venugopal, A.; Colombo, L.; Vogel, E. M. Contact Resistance in Few and Multilayer Graphene Devices Appl. Phys. Lett. 2010, 96, 013512
25. 2 or Two-Dimensional Semiconducting Atomic Crystals Appl. Phys. Lett. 2014, 104, 113504
26. 2 P-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
27. 2/Graphene Heterojunction Contacts Nano Lett. 2014, 14, 4511-4516
28. 2 ACS Nano 2014, 2880-2888
29. Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and Electrical Characterization of Ultrathin Crystals of Layered Transition-Metal Dichalcogenides J. Appl. Phys. 2007, 101, 014507
30. 2 Top Dielectric Appl. Phys. Lett. 2010, 97, 123105
31. Du, Y.; Yang, L.; Liu, H.; Ye, P. D. Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-Effect Transistors APL Mater. 2014, 2, 092510
32. 2 Nanosheet Transistors Nanoscale 2014, 6, 7226-7231
33. Ma, Q.; Isarraraz, M.; Wang, C. S.; Preciado, E.; Klee, V.; Bobek, S.; Yamaguchi, K.; Li, E.; Odenthal, P. M.; Nguyen, A. et al. Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange ACS Nano 2014, 8, 4672-4677
34. Çakιr, D.; Sahin, H.; Peeters, F. M. Doping of Rhenium Disulfide Monolayers: A Systematic First Principles Study Phys. Chem. Chem. Phys. 2014, 16, 16771-16779
35. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable P-N Diodes in a Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 9, 262-267
36. 3 Dielectric Appl. Phys. Lett. 2009, 94, 062107